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The origin and reduction of dislocations in Gallium Nitride.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 208, doi. 10.1007/s10854-008-9648-7
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- Article
Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors.
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- Microscopy & Microanalysis, 2014, v. 20, n. S3, p. 1024, doi. 10.1017/S1431927614006849
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- Article
Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices.
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- 2010
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- Abstract
The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 656, doi. 10.1007/s11664-010-1177-5
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- Article
Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor.
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- Scientific Reports, 2017, p. 41982, doi. 10.1038/srep41982
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- Article
Defect-Induced Ferromagnetism in Co-doped ZnOThis work was supported by the EPSRC, UK.
- Published in:
- Advanced Materials, 2006, v. 18, n. 11, p. 1449, doi. 10.1002/adma.200502200
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- Article
Publisher Correction: Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells.
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- 2020
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- Correction Notice
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells.
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- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-019-53693-2
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- Article
Photoluminescence studies of cubic GaN epilayers.
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- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600733
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- Article
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 928, doi. 10.1002/pssb.201451543
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- Article
Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r-plane sapphire.
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- Physica Status Solidi (B), 2012, v. 249, n. 3, p. 494, doi. 10.1002/pssb.201100479
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- Article
Modification of carrier localization in basal-plane stacking faults: The effect of Si-doping in a-plane GaN.
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- Physica Status Solidi (B), 2012, v. 249, n. 3, p. 498, doi. 10.1002/pssb.201100480
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- Article
Atom probe reveals the structure of In <sub>x</sub> Ga<sub>1- x </sub>N based quantum wells in three dimensions.
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- Physica Status Solidi (B), 2008, v. 245, n. 5, p. 861, doi. 10.1002/pssb.200778595
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- Article
Unintentional doping in GaN assessed by scanning capacitance microscopy.
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- Physica Status Solidi (B), 2008, v. 245, n. 5, p. 896, doi. 10.1002/pssb.200778567
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- Article
Electric fields in AlGaN/GaN quantum well structures.
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- Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1551, doi. 10.1002/pssb.200565382
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- Article
Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN.
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- Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2820, doi. 10.1002/pssb.200405056
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- Article
Exciton localization in InGaN/GaN single quantum well structures.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 344, doi. 10.1002/pssb.200303338
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- Article
Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 297, doi. 10.1002/pssb.200303262
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- Article
The impact of growth parameters on trench defects in InGaN/GaN quantum wells.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 4, p. 740, doi. 10.1002/pssa.201300485
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- Article
Properties of trench defects in InGaN/GaN quantum well structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 1, p. 195, doi. 10.1002/pssa.201200408
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- Article
Electron energy-loss near edge structure (ELNES) of InGaN quantum wells.
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- Journal of Microscopy, 2003, v. 210, n. 1, p. 89, doi. 10.1046/j.1365-2818.2003.01180.x
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- Article
High-efficiency InGaN/GaN quantum well structures on large area silicon substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 13, doi. 10.1002/pssa.201100129
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- Article
Growth, microstructure and morphology of epitaxial ScGaN films.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 33, doi. 10.1002/pssa.201100158
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- Publication type:
- Article
The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1529, doi. 10.1002/pssa.201001007
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- Publication type:
- Article
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy.
- Published in:
- Journal of Materials Science, 2006, v. 41, n. 9, p. 2729, doi. 10.1007/s10853-006-7876-x
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- Article