Found: 17
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Photoelectric determination of the series resistance of multijunction solar cells.
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- Semiconductors, 2012, v. 46, n. 8, p. 1051, doi. 10.1134/S1063782612080143
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- Article
High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD.
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- Semiconductors, 2007, v. 41, n. 6, p. 727, doi. 10.1134/S106378260706022X
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- Article
P--i--n Structures Based on High-Ohmic Gettered Gallium Arsenide for α Particle Detectors.
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- Technical Physics Letters, 2006, v. 32, n. 11, p. 987, doi. 10.1134/S1063785006110241
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- Article
Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells.
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- Technical Physics, 2013, v. 58, n. 7, p. 1034, doi. 10.1134/S106378421307027X
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- Article
Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD.
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- Technical Physics Letters, 2021, v. 47, n. 10, p. 730, doi. 10.1134/S1063785021070270
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- Article
Energy Consumption at High-Frequency Modulation of an Uncooled InGaAs/GaAs/AlGaAs Microdisk Laser.
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- Technical Physics Letters, 2021, v. 47, n. 9, p. 685, doi. 10.1134/S1063785021070142
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- Article
Increasing the Efficiency of 520- to 540-nm Laser Radiation Photovoltaic Converters Based on GaInP/GaAs Heterostructures.
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- Technical Physics Letters, 2021, v. 47, n. 4, p. 290, doi. 10.1134/S106378502103024X
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- Article
High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures.
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- Technical Physics Letters, 2020, v. 46, n. 12, p. 1219, doi. 10.1134/S106378502012024X
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- Article
The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 599, doi. 10.1134/S106378502006022X
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- Article
The Effect of Self-Heating on the Modulation Characteristics of a Microdisk Laser.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 515, doi. 10.1134/S1063785020060152
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- Article
Finding the Energy Gap of Ga1 –xInxAs p–n Junctions on a Metamorphic Buffer from the Photocurrent Spectrum.
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- Technical Physics Letters, 2020, v. 46, n. 4, p. 332, doi. 10.1134/S1063785020040112
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- Article
Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm).
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 203, doi. 10.1134/S1063785020030116
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- Article
Increasing the Photocurrent of a Ga(In)As Subcell in Multijunction Solar Cells Based on GaInP/Ga(In)As/Ge Heterostructure.
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- Technical Physics Letters, 2019, v. 45, n. 12, p. 1258, doi. 10.1134/S1063785019120253
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- Article
Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots.
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- Technical Physics Letters, 2019, v. 45, n. 10, p. 994, doi. 10.1134/S1063785019100158
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- Article
Energy Consumption for High-Frequency Switching of a Quantum-Dot Microdisk Laser.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 847, doi. 10.1134/S1063785019080315
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- Article
An Antireflection Coating of a Germanium Subcell in GaInP/GaAs/Ge Solar Cells.
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- Technical Physics Letters, 2018, v. 44, n. 11, p. 1042, doi. 10.1134/S1063785018110263
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- Article
Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 675, doi. 10.1134/S1063785018080151
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- Article