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Dynamic Chaos in a Partially Illuminated Compensated Semiconductor Under the Conditions of Impurity-Related Breakdown.
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- Semiconductors, 2005, v. 39, n. 6, p. 642, doi. 10.1134/1.1944853
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- Article
Differential Conductivity at the Transverse Runaway of Hot Electrons.
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- Technical Physics, 2000, v. 45, n. 5, p. 571, doi. 10.1134/1.1259679
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Undamped self-oscillations and dynamical chaos under conditions of impurity breakdown of a semiconductor in the fixed-current regime.
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- JETP Letters, 1998, v. 67, n. 5, p. 358, doi. 10.1134/1.567674
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On a possibility of the appearance of two minima in the temperature dependence of mobility.
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- Physica Status Solidi (B), 1987, v. 140, n. 2, p. K125, doi. 10.1002/pssb.2221400241
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- Article
Low-Temperature Conductivity and Mobility in Semiconductors.
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- Physica Status Solidi (B), 1982, v. 112, n. 2, p. 379, doi. 10.1002/pssb.2221120203
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- Article
Nonradiative multiphonon carrier capture by deep neutral traps.
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- Physica Status Solidi (B), 1979, v. 95, n. 1, p. 117, doi. 10.1002/pssb.2220950113
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Faraday Rotation in Presence of Attractive Traps.
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- Physica Status Solidi (B), 1978, v. 88, n. 1, p. 283, doi. 10.1002/pssb.2220880132
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Inelastic impurity scattering of hot electrons in semiconductors.
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- Physica Status Solidi (B), 1971, v. 48, n. 1, p. 65, doi. 10.1002/pssb.2220480103
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On the Theory of the Low-Temperature Galvanomagnetic Effects in Semiconductors in Strong Electric Fields.
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- Physica Status Solidi (B), 1970, v. 40, n. 2, p. 471, doi. 10.1002/pssb.19700400204
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- Article
On the Field Dependence of the Carrier Concentration in a High Electric Field.
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- Physica Status Solidi (B), 1969, v. 33, n. 2, p. K137, doi. 10.1002/pssb.19690330265
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- Article
Peculiarities of the Impurity Breakdown under Conditions of Transverse Runaway of Hot Electrons.
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- Technical Physics Letters, 2003, v. 29, n. 3, p. 246, doi. 10.1134/1.1565648
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- Article
Differential Conductivity under Conditions of Transverse Runaway of Hot Electrons in Arbitrarily Oriented Electric and Magnetic Fields.
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- Technical Physics Letters, 2002, v. 28, n. 9, p. 782, doi. 10.1134/1.1511784
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- Article
The Tunneling Capture of Electrons Modifies the Width of the Electric Field Strength Interval Featuring Negative Differential Conductivity.
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- Technical Physics Letters, 2001, v. 27, n. 3, p. 195, doi. 10.1134/1.1359823
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- Article
The Effect of Phonon Heating on the Transverse Runaway of Hot Electrons.
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- Technical Physics Letters, 2000, v. 26, n. 2, p. 135, doi. 10.1134/1.1262766
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- Article
Transverse hot-electron effects in semiconductors.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 470, doi. 10.1134/1.1262150
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- Article
Undamped self-oscillations in a compensated semiconductor under conditions of impurity breakdown in the presence of a magnetic field.
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- Technical Physics Letters, 1997, v. 23, n. 8, p. 643, doi. 10.1134/1.1261780
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- Article
The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown of a Compensated Semiconductor with a Shorted Hall Voltage.
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- Semiconductors, 2001, v. 35, n. 8, p. 873, doi. 10.1134/1.1393018
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- Article
Hot-Electron Capture by Negatively Charged Centers in an Approximation of Quasi-elastic Scattering.
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- Semiconductors, 2000, v. 34, n. 10, p. 1109, doi. 10.1134/1.1322870
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- Article
Negative dynamic differential conductivity at the cyclotron frequency in Ga[sub 1-x]Al[sub x]As under conditions of ballistic intervalley electron transfer.
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- Semiconductors, 1998, v. 32, n. 2, p. 148, doi. 10.1134/1.1187336
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The problem of intermediate temperatures or electric fields in the scattering of hot electrons by acoustic phonons.
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- Semiconductors, 1997, v. 31, n. 9, p. 916, doi. 10.1134/1.1187151
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Calculation of the trapping of hot electrons by repulsive centers under the conditions of a needle-type distribution function.
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- Semiconductors, 1997, v. 31, n. 8, p. 804, doi. 10.1134/1.1187255
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- Article
Evolution of static negative differential conductivity in Ga[sub 1-x]Al[sub x]As as a function of the transverse magnetic field and the composition of the solid solution.
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- Semiconductors, 1997, v. 31, n. 8, p. 841, doi. 10.1134/1.1187272
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Trapping of hot electrons at repulsive centers under transverse runaway conditions.
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- Semiconductors, 1997, v. 31, n. 2, p. 161, doi. 10.1134/1.1187099
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Transverse runaway of hot electrons and the electron-temperature approximation.
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- Journal of Experimental & Theoretical Physics, 1998, v. 86, n. 2, p. 380, doi. 10.1134/1.558439
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Impurity breakdown under transverse runaway of hot electrons.
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- Physica Status Solidi (B), 2003, v. 240, n. 3, p. 584, doi. 10.1002/pssb.200301866
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