TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING.
- Published in:
- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 279, doi. 10.1142/S0219581X07004729
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- Publication type:
- Article
Works by KOLODZEY, J.
Results: 9
1
2
TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES.
- Published in:
- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 171, doi. 10.1142/S0219581X0400195X
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- Publication type:
- Article
3
TERAHERTZ SENSING OF MATERIALS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 121, doi. 10.1142/S0129156407004333
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- Publication type:
- Article
4
ELECTRICAL EFFECTS OF DNA MOLECULES ON SILICON FIELD EFFECT TRANSISTOR.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 60, doi. 10.1142/S0129156404002673
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- Publication type:
- Article
5
TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 46, doi. 10.1142/S012915640400265X
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- Publication type:
- Article
6
Silicon Carbide Terahertz Emitting Devices.
- Published in:
- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 726, doi. 10.1007/s11664-007-0371-6
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- Publication type:
- Article
7
Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures.
- Published in:
- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 192, doi. 10.1002/pssb.200672548
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- Publication type:
- Article
8
THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures.
- Published in:
- Physica Status Solidi (B), 2003, v. 235, n. 2, p. 293, doi. 10.1002/pssb.200301571
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- Publication type:
- Article
9
THz lasing of SiGe/Si quantum-well structures due to shallow acceptors.
- Published in:
- Physica Status Solidi (B), 2003, v. 235, n. 1, p. 135, doi. 10.1002/pssb.200301536
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- Publication type:
- Article