Works by KAGAN, M. S.

Results: 18

TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 279, doi. 10.1142/S0219581X07004729

By:

KAGAN, M. S.;
ALTUKHOV, I. V.;
PAPROTSKIY, S. K.;
SINIS, V. P.;
YASSIEVICH, I. N.;
KOLODZEY, J.

Publication type:

Article

Features of the Conductivity of Nominally Undoped Single-Crystal CVD Diamond.

Published in:

JETP Letters, 2025, v. 121, n. 3, p. 220, doi. 10.1134/S0021364024605293

By:

Kagan, M. S.;
Paprotskiy, S. K.;
Khvalkovskiy, N. A.;
Altukhov, I. V.;
Rodionov, N. B.;
Bol'shakov, A. P.;
Ral'chenko, V. G.;
Khmel'nitskiy, R. A.

Publication type:

Article

Electronic Transport in InAs/AlSb Superlattices with Electric Domains.

Published in:

Journal of Communications Technology & Electronics, 2022, v. 67, n. 7, p. 882, doi. 10.1134/S1064226922070026

By:

Altukhov, I. V.;
Dizhur, S. E.;
Kagan, M. S.;
Paprotskiy, S. K.;
Khvalkovskiy, N. A.;
Il'inskaya, N. D.;
Usikova, A. A.;
Baranov, A. N.;
Teissier, R.

Publication type:

Article

Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains.

Published in:

Journal of Communications Technology & Electronics, 2021, v. 66, n. 12, p. 1385, doi. 10.1134/S1064226921440017

By:

Altukhov, I. V.;
Dizhur, S. E.;
Kagan, M. S.;
Khvalkovskiy, N. A.;
Paprotskiy, S. K.;
Vasil'evskii, I. S.;
Vinichenko, A. N.

Publication type:

Article

The Frenkel–Poole Effect in the Ionization of an Acceptor Impurity of Boron in Diamond in a Strong Electric Field.

Published in:

Journal of Communications Technology & Electronics, 2020, v. 65, n. 11, p. 1336, doi. 10.1134/S1064226920110029

By:

Altukhov, I. V.;
Kagan, M. S.;
Paprotskii, S. K.;
Khvalkovskii, N. A.;
Rodionov, N. B.;
Bolshakov, A. P.;
Ralchenko, V. G.;
Khmelnitskii, R. A.

Publication type:

Article

Features of Tunneling Current in Superlattices with Electrical Domains.

Published in:

Journal of Communications Technology & Electronics, 2019, v. 64, n. 10, p. 1140, doi. 10.1134/S1064226919090158

By:

Paprotskiy, S. K.;
Altukhov, I. V.;
Kagan, M. S.;
Khval'kovskiy, N. A.;
Kohn, I. A.;
Il'inskaya, N. D.;
Usikova, A. A.;
Baranov, A. N.;
Teissier, R.

Publication type:

Article

Diamond Diode Structures Based on Homoepitaxial Films.

Published in:

Journal of Communications Technology & Electronics, 2018, v. 63, n. 7, p. 828, doi. 10.1134/S1064226918070148

By:

Rodionov, N. B.;
Pal’, A. F.;
Bol’shakov, A. P.;
Ral’chenko, V. G.;
Khmel’nitskiy, R. A.;
Dravin, V. A.;
Malykhin, S. A.;
Altukhov, I. V.;
Kagan, M. S.;
Paprotskiy, S. K.

Publication type:

Article

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures.

Published in:

Physica Status Solidi (B), 2007, v. 244, n. 1, p. 192, doi. 10.1002/pssb.200672548

By:

Kagan, M. S.;
Altukhov, I. V.;
Sinis, V. P.;
Paprotskiy, S. K.;
Yassievich, I. N.;
Kolodzey, J.

Publication type:

Article

THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 2, p. 293, doi. 10.1002/pssb.200301571

By:

Kagan, M. S.;
Altukhov, I. V.;
Chirkova, E. G.;
Sinis, V. P.;
Troeger, R. T.;
Ray, S. K.;
Kolodzey, J.

Publication type:

Article

THz lasing of SiGe/Si quantum-well structures due to shallow acceptors.

Published in:

Physica Status Solidi (B), 2003, v. 235, n. 1, p. 135, doi. 10.1002/pssb.200301536

By:

Kagan, M. S.;
Altukhov, I. V.;
Chirkova, E. G.;
Sinis, V. P.;
Troeger, R. T.;
Ray, S. K.;
Kolodzey, J.

Publication type:

Article

Lateral Transport in Strained SiGe Quantum Wells Doped with Boron.

Published in:

Physica Status Solidi (B), 1999, v. 211, n. 1, p. 495, doi. 10.1002/(SICI)1521-3951(199901)211:1<495::AID-PSSB495>3.0.CO;2-8

By:

Kagan, M. S.;
Altukhov, I. V.;
Korolev, K. A.;
Orlov, D. V.;
Sinis, V. P.;
Thomas, S. G.;
Wang, K. L.;
Yassievich, I. N.

Publication type:

Article

Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure.

Published in:

Physica Status Solidi (B), 1996, v. 198, n. 1, p. 35, doi. 10.1002/pssb.2221980105

By:

Altukhov, I. V.;
Chirkova, E. G.;
Kagan, M. S.;
Korolev, K. A.;
Sinis, V. P.;
Yassievich, I. N.

Publication type:

Article

Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 473, doi. 10.1134/S1063782618040036

By:

Altukhov, I. V.;
Dizhur, S. E.;
Kagan, M. S.;
Khvalkovskiy, N. A.;
Paprotskiy, S. K.;
Vasil’evskii, I. S.;
Vinichenko, A. N.

Publication type:

Article

Electron Localization in a Nondegenerate Semiconductor with a Random Potential due to Charged Impurities.

Published in:

Journal of Experimental & Theoretical Physics, 2000, v. 90, n. 4, p. 662, doi. 10.1134/1.559151

By:

Zhdanova, N. G.;
Kagan, M. S.;
Landsberg, E. G.

Publication type:

Article

Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium.

Published in:

Journal of Experimental & Theoretical Physics, 1999, v. 88, n. 1, p. 51, doi. 10.1134/1.558763

By:

Altukhov, I. V.;
Kagan, M. S.;
Korolev, K. A.;
Sinis, V. P.;
Chirkova, E. G.;
Odnoblyudov, M. A.;
Yassievich, I. N.

Publication type:

Article

Nonlinear Electrical Effects and Recombination of the Hot Electrons in Compensated Germanium.

Published in:

Physica Status Solidi (B), 1965, v. 11, n. 1, p. 415, doi. 10.1002/pssb.19650110139

By:

Kagan, M. S.;
Kalashnikov, S. G.;
Zhdanova, N. G.

Publication type:

Article

NON-RESONANT TUNNELLING IN SHORT-PERIOD SUPERLATTICES WITH OPTICAL CAVITIES.

Published in:

Lithuanian Journal of Physics, 2014, v. 54, n. 1, p. 50, doi. 10.3952/lithjphys.54112

By:

Kagan, M. S.;
Altukhov, I. V.;
Paprotskiy, S. K.;
Baranov, A. N.;
Teissier, R.;
Il'inskaya, N. D.;
Usikova, A. A.;
Buravlev, A. D.;
Ustinov, V. M.

Publication type:

Article

Stationary State of a Semiconductor with Negative Bulk Differential Conductivity.

Published in:

Physica Status Solidi (B), 1967, v. 24, n. 2, p. 551, doi. 10.1002/pssb.19670240218

By:

Kagan, M. S.;
Kalashnikov, S. G.;
Zhdanova, N. G.

Publication type:

Article