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Characteristics of Extended-Gate Field-Effect Transistor (EGFET) Based on Porous n-Type (111) Silicon for Use in pH Sensors.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 10, p. 5804, doi. 10.1007/s11664-017-5604-8
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A novel porous silicon multi-ions selective electrode based extended gate field effect transistor for sodium, potassium, calcium, and magnesium sensor.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 11, p. N.PAG, doi. 10.1007/s00339-019-3056-0
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- Article
Influence of CuS powder concentration on the construction of hybrid PVA/CuS thin films for polymer light-emitting applications.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 4, p. 3456, doi. 10.1007/s10854-020-02893-y
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- Article
Ar GAS FLOW RATE INFLUNCEMENT ON THE STRUCTURE PROPERTIES AND ELECTRICAL BEHAVIOR OF NEW SENSING MEMBRANE ZnO/CU/ZnO (ZCZ) EXTENDED GATE FIELD EFFECT TRANSISTOR (EG-FET).
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- Digest Journal of Nanomaterials & Biostructures (DJNB), 2017, v. 12, n. 4, p. 1119
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- Article