21-2: Highly Reliable Amorphous Indium-Gallium-Zinc-Tin-Oxide TFTs with Back-Channel-Etch Structure.
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 291, doi. 10.1002/sdtp.11608
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- Publication type:
- Article
Works by Jiushi, Wang
Results: 2
1
2
Structure and Dielectric Properties of Ba(Ti 0.9 Zr 0.1 )O 3 Ceramics Doped with Bi.
- Published in:
- Ferroelectrics, 2014, v. 458, n. 1, p. 70, doi. 10.1080/00150193.2013.849998
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- Publication type:
- Article