Found: 6
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Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure.
- Published in:
- Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 8, p. 1729, doi. 10.1007/s00339-003-2456-2
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- Article
Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors.
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- Applied Physics A: Materials Science & Processing, 2003, v. 77, n. 5, p. 669, doi. 10.1007/s00339-002-1760-6
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- Article
Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films.
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- Applied Physics A: Materials Science & Processing, 2001, v. 72, n. 1, p. 85, doi. 10.1007/s003390000568
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- Article
Influence of growth conditions on the incorporation of substitutional C in Si[sub 1-x-y] Ge[sub x] C[sub y] alloy on Si by chemical vapor deposition using C[sub 2] H[sub 4].
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- Applied Physics A: Materials Science & Processing, 1999, v. 68, n. 4, p. 457, doi. 10.1007/s003390050923
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- Article
Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition.
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- Applied Physics A: Materials Science & Processing, 1998, v. 67, n. 5, p. 567, doi. 10.1007/s003390050823
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- Article
Fabrication of silicon nanowires.
- Published in:
- Applied Physics A: Materials Science & Processing, 1998, v. 66, n. 5, p. 539, doi. 10.1007/s003390050709
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- Article