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Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200870
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- Article
Screening Switching Materials with Low Leakage Current and High Thermal Stability for Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200150
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- Article
A new opportunity for the emerging tellurium semiconductor: making resistive switching devices.
- Published in:
- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-26399-1
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- Article
The role of arsenic in the operation of sulfur-based electrical threshold switches.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41643-6
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- Article
Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 6, p. 1, doi. 10.1002/pssr.202100084
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- Article
Diffusion phase transition and aging properties induced by B-site disorder in Na-doped barium strontium titanium ceramics.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5581, doi. 10.1007/s10854-014-2347-7
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- Article
Valence Band Structure of Chalcogenide Obtained by X‐Ray Photoelectron Spectroscopy and Etching Technique.
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- Physica Status Solidi (B), 2021, v. 258, n. 7, p. 1, doi. 10.1002/pssb.202100038
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- Article
Ultrahigh drive current and large selectivity in GeS selector.
- Published in:
- Nature Communications, 2020, v. 11, n. 1, p. N.PAG, doi. 10.1038/s41467-020-18382-z
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- Article