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Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology.
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- Crystals (2073-4352), 2023, v. 13, n. 5, p. 815, doi. 10.3390/cryst13050815
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- Article
Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells.
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- Crystals (2073-4352), 2023, v. 13, n. 5, p. 834, doi. 10.3390/cryst13050834
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- Article
Enhanced performance of flexible LED by low-temperature annealing.
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- Materials Science & Technology, 2023, v. 39, n. 7, p. 858, doi. 10.1080/02670836.2022.2151090
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- Article
Direct Observation of Carrier Transportation between Localized States in InGaN Quantum Wells.
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- Crystals (2073-4352), 2022, v. 12, n. 12, p. 1837, doi. 10.3390/cryst12121837
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- Article
Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure.
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- Sensors (14248220), 2022, v. 22, n. 12, p. N.PAG, doi. 10.3390/s22124536
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- Article
Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells.
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- Materials (1996-1944), 2022, v. 15, n. 11, p. 3998, doi. 10.3390/ma15113998
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- Article
High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-11946-7
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- Article
N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation.
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- Materials (1996-1944), 2022, v. 15, n. 9, p. 3005, doi. 10.3390/ma15093005
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- Article
Monolithic light emitting device and light detecting device fabricated with a commercial LED wafer.
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- Optical & Quantum Electronics, 2020, v. 52, n. 8, p. N.PAG, doi. 10.1007/s11082-020-02478-3
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- Article
The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications.
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- Scientific Reports, 2017, p. 43357, doi. 10.1038/srep43357
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- Article
Investigation of temperature-dependent photoluminescence in multi-quantum wells.
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- Scientific Reports, 2015, p. 12718, doi. 10.1038/srep12718
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- Article
A novel method to reduce the period limitation in laser interference lithography.
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- Optical & Quantum Electronics, 2015, v. 47, n. 7, p. 2331, doi. 10.1007/s11082-014-0113-y
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- Article
Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer.
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- Applied Physics A: Materials Science & Processing, 2015, v. 119, n. 4, p. 1209, doi. 10.1007/s00339-015-9176-2
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- Article
Realization of high-luminous-efficiency InGaN light-emitting diodes in the 'green gap' range.
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- Scientific Reports, 2015, p. 10883, doi. 10.1038/srep10883
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- Article
Indium segregation measured in InGaN quantum well layer.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep06734
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- Article
Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N<sub>2</sub> environment.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 5, p. 1175, doi. 10.1002/pssa.201330490
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- Article
Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer.
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- Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 4, p. 1055, doi. 10.1007/s00339-014-8284-8
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- Article
A novel wavelength-adjusting method in InGaN-based light-emitting diodes.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep03389
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- Article
Recent Progress in GaN-Based Light-Emitting Diodes.
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- Advanced Materials, 2009, v. 21, n. 45, p. 4641, doi. 10.1002/adma.200901349
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- Article