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Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects.
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- Advanced Functional Materials, 2024, v. 34, n. 25, p. 1, doi. 10.1002/adfm.202315781
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Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 13, p. 1, doi. 10.1002/pssa.202300086
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- Article
Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 20, p. 1, doi. 10.1002/pssa.202100351
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- Article
Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt.
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- Crystals (2073-4352), 2021, v. 11, n. 9, p. 1058, doi. 10.3390/cryst11091058
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The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 17, p. 1, doi. 10.1002/pssa.202100070
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- Article
Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films.
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- Nano Research, 2012, v. 5, n. 9, p. 646, doi. 10.1007/s12274-012-0250-1
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- Article