Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.
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- Materials (1996-1944), 2019, v. 12, n. 12, p. 1925, doi. 10.3390/ma12121925
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- Article
Works by Ji, Mi-Hee
Results: 3
1
2
Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1296, doi. 10.1002/pssa.201532764
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- Article
3
Rethinking phonons: The issue of disorder.
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- NPJ Computational Materials, 2017, v. 3, n. 1, p. N.PAG, doi. 10.1038/s41524-017-0052-9
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- Publication type:
- Article