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CURRENT-VOLTAGE MEASUREMENTS WITHIN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF TUNNEL JUNCTIONS FOR HIGH CONCENTRATION PHOTOVOLTAICS.
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- International Journal of Nanoscience, 2012, v. 11, n. 4, p. -1, doi. 10.1142/S0219581X12400145
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- Article
Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells.
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- Progress in Photovoltaics, 2011, v. 19, n. 4, p. 442, doi. 10.1002/pip.1056
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- Article
High‐Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology.
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- Solar RRL, 2024, v. 8, n. 1, p. 1, doi. 10.1002/solr.202300643
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- Article
High‐Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology.
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- Solar RRL, 2024, v. 8, n. 1, p. 1, doi. 10.1002/solr.202300643
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- Article
Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices.
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- Journal of Photonics for Energy, 2017, v. 7, n. 2, p. 1, doi. 10.1117/1.JPE.7.022502
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- Article
Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.
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- Micromachines, 2021, v. 12, n. 11, p. 1284, doi. 10.3390/mi12111284
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- Article
Microstructured antireflective encapsulant on concentrator solar cells.
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- Progress in Photovoltaics, 2022, v. 30, n. 2, p. 132, doi. 10.1002/pip.3468
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- Article
Miniaturization of InGaP/InGaAs/Ge solar cells for micro‐concentrator photovoltaics.
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- Progress in Photovoltaics, 2021, v. 29, n. 9, p. 990, doi. 10.1002/pip.3421
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- Article
Three‐junction monolithic interconnected modules for concentrator photovoltaics.
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- Progress in Photovoltaics, 2021, v. 29, n. 6, p. 603, doi. 10.1002/pip.3404
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- Article
Self‐powered light‐induced plating for III‐V/Ge triple‐junction solar cell metallization.
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- Energy Science & Engineering, 2020, v. 8, n. 10, p. 3672, doi. 10.1002/ese3.774
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- Article
A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700658
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- Article
Normally-off AlGaN/GaN MOS-HEMT using ultra-thin Al<sub>0.45</sub>Ga<sub>0.55</sub>N barrier layer.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600836
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- Article
Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 917, doi. 10.1002/pssa.201532732
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- Article
Multi-Terminal GaInP/GaInAs/Ge Solar Cells for Subcells Characterization.
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- Energies (19961073), 2024, v. 17, n. 11, p. 2538, doi. 10.3390/en17112538
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- Article
Low-Cost Passivated Al Front Contacts for III-V/Ge Multijunction Solar Cells.
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- Energies (19961073), 2023, v. 16, n. 17, p. 6209, doi. 10.3390/en16176209
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- Article
CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD–Aluminum Oxide.
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- Sensors (14248220), 2024, v. 24, n. 10, p. 3020, doi. 10.3390/s24103020
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- Article
Study of electrical properties of Al/Si<sub>3</sub>N<sub>4</sub>/n-GaAs MIS capacitors deposited at low and high frequency PECVD.
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- European Physical Journal - Applied Physics, 2022, v. 97, p. 1, doi. 10.1051/epjap/2022220062
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- Article