Found: 17
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Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 5, p. 2379, doi. 10.1007/s10854-014-1891-5
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Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure.
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- Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 854, doi. 10.1007/s10854-010-0225-5
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- Article
The influence of rapid thermal annealing on electrical and structural properties of Pt/Au Schottky contacts to n-type InP.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 8, p. 804, doi. 10.1007/s10854-009-9996-y
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- Article
Investigation on deep level defects in rapid thermal annealed undoped n-type InP.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 285, doi. 10.1007/s10854-009-9906-3
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- Article
Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 8092, doi. 10.1007/s10854-021-05532-2
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- Article
Effect of rare-earth Pr<sub>6</sub>O<sub>11</sub> insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18710, doi. 10.1007/s10854-019-02224-w
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- Article
Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 14, p. 897, doi. 10.1049/el.2018.1066
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- Article
Fermi‐level depinning in germanium Schottky junction using nitrogen plasma treatment.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 15, p. 897, doi. 10.1049/el.2018.1066
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- Article
Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3.
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- Journal of Electronic Materials, 2020, v. 49, n. 1, p. 297, doi. 10.1007/s11664-019-07728-z
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- Article
Structural, Chemical and Electrical Properties of Au/La<sub>2</sub>O<sub>3</sub>/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer.
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- Journal of Electronic Materials, 2019, v. 48, n. 7, p. 4217, doi. 10.1007/s11664-019-07193-8
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- Article
Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/BiNaTiO-BaTiO/ n-GaN MIS Structure.
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- Journal of Electronic Materials, 2015, v. 44, n. 1, p. 549, doi. 10.1007/s11664-014-3481-y
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- Article
Electrical Properties and Current Transport Mechanisms of the Au/ n-GaN Schottky Structure with Solution- Processed High- k BaTiO Interlayer.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3499, doi. 10.1007/s11664-014-3177-3
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- Article
Effect of Naringenin on metabolic markers, lipid profile and expression of GFAP in C6 glioma cells implanted rat's brain.
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- Annals of Neurosciences, 2011, v. 18, n. 4, p. 151, doi. 10.5214/ans.0972.7531.1118406
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- Article
Effects of the flow rate of O<sub>2</sub> annealing ambient on structural and electrical properties of n+ emitter junctions formed using screen-printed phosphorus diffusion process.
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 11/12, p. 1440, doi. 10.1002/sia.4970
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- Article
Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes.
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- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 10, p. 1, doi. 10.1007/s00339-021-04945-4
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- Article
Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00339-017-1511-3
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Effect of annealing temperature on the electrical properties of Au/TaO/n-GaN metal-insulator-semiconductor (MIS) structure.
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- Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 3, p. 713, doi. 10.1007/s00339-013-7797-x
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- Article