Found: 85
Select item for more details and to access through your institution.
Threshold Inverter Quantizer-Based 2-Bit Comparator using Spatial Wavefunction Switched (SWS) FET Inverters: Power Dissipation Analysis.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S0129156424400780
- By:
- Publication type:
- Article
Simulation and Comparative Study of Propagation Delay in Multi-Channel Quantum SWS-CMOS-Based Inverters Using II–VI Gate Insulator.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S0129156424400585
- By:
- Publication type:
- Article
In-Memory Computing Using Dot-Product via Multi-Bit QD-NVRAMs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S012915642440055X
- By:
- Publication type:
- Article
A Comprehensive Study and Comparison of 2-Bit 7T–10T SRAM Configurations with 4-State CMOS-SWS Inverters.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S0129156424400640
- By:
- Publication type:
- Article
SI/GE Quantum Dot Channel FETs for Multi-Bit Computing.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S0129156424400767
- By:
- Publication type:
- Article
Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S0129156424400731
- By:
- Publication type:
- Article
Evaluation of Electrochemical Sensor Using Microfluidic System.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S0129156424400627
- By:
- Publication type:
- Article
The Static Noise Margin (SNM) of Quaternary SRAM using Quantum SWS-FET.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S012915642440069X
- By:
- Publication type:
- Article
8-State SRAMS Based on Cladded GE Quantum Dot Gate FETS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S0129156424400779
- By:
- Publication type:
- Article
Threshold Inverter Quantizer (TIQ)-Based 2-Bit Comparator Using Spatial Wavefunction Switched (SWS) FET Inverters.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500258
- By:
- Publication type:
- Article
Design and Simulation of Multi-State D-Latch Circuit Using QDC-SWS FETs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S012915642350009X
- By:
- Publication type:
- Article
Low Noise Gain and Index Tailored External Cavity Laser Operating at 1310 nm for Performance Enhancements of IMDD Photonic Links.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500118
- By:
- Publication type:
- Article
Magnetostrictive Fiber Sensors as Total Field Magnetometers.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500222
- By:
- Publication type:
- Article
Propagation Delay and Power Dissipation Analysis for a 2-Bit SRAM Using Multi-State SWS Inverter.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500234
- By:
- Publication type:
- Article
Preface.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423020019
- By:
- Publication type:
- Article
Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500180
- By:
- Publication type:
- Article
Novel Multi-State QDC-QDG FETs and Gate All Around (GAA) FETs for Integrated Logic and QD-NVRAMs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S012915642350026X
- By:
- Publication type:
- Article
Propagation Delay Evaluation for Spatial Wavefunction Switched (SWS) FET-Based Inverter.
- Published in:
- International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400080
- By:
- Publication type:
- Article
Power Dissipation and Cell Area: Quaternary Logic CMOS Inverter vs. Four-State SWS-FET Inverter.
- Published in:
- International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400092
- By:
- Publication type:
- Article
Preface.
- Published in:
- 2022
- By:
- Publication type:
- Editorial
Quantum Dot Channel FETs Harnessing Mini-Energy Band Transitions in GeO<sub>x</sub>-Ge and Si QDSL for Multi-Bit Computing.
- Published in:
- International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400122
- By:
- Publication type:
- Article
Mid to Long Wave Infrared Photodetectors Using Intra-Mini-Energy Band Transitions in GeO<sub>x</sub> Cladded Ge Quantum Dot Superlattice (QDSL) FETs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400158
- By:
- Publication type:
- Article
Integrating QD-NVRAMs and QDC-SWS FET-Based Logic for Multi-Bit Computing.
- Published in:
- International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400201
- By:
- Publication type:
- Article
QDG-SRAM Simulation Using Physics-Based Models of QDG-FET and QDG-Inverter.
- Published in:
- International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400110
- By:
- Publication type:
- Article
A Multi-Bit Non-Volatile Compute-in-Memory Architecture with Quantum-Dot Transistor Based Unit.
- Published in:
- International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400183
- By:
- Publication type:
- Article
Risk factors for mental health symptoms during the COVID-19 pandemic in ophthalmic personnel and students in USA (& Canada): a cross-sectional survey study.
- Published in:
- BMC Psychiatry, 2021, v. 21, n. 1, p. 1, doi. 10.1186/s12888-021-03535-1
- By:
- Publication type:
- Article
Low-Threshold II–VI Lattice-Matched SWS-FETs for Multivalued Low-Power Logic.
- Published in:
- Journal of Electronic Materials, 2021, v. 50, n. 5, p. 2618, doi. 10.1007/s11664-021-08807-w
- By:
- Publication type:
- Article
Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO<sub>2</sub> Barriers.
- Published in:
- International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400017
- By:
- Publication type:
- Article
A Novel Addressing Circuit for SWS-FET Based Multivalued Dynamic Random-Access Memory Array.
- Published in:
- International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400091
- By:
- Publication type:
- Article
A Novel Peripheral Circuit for SWSFET Based Multivalued Static Random-Access Memory.
- Published in:
- International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400108
- By:
- Publication type:
- Article
3-D Confined SWS-FETs Combining Quantum Well and Quantum Dot Superlattice (QDSL).
- Published in:
- International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S012915642040011X
- By:
- Publication type:
- Article
Modeling of Quantum Dot Channel (QDC) Si FETs at Sub-Kelvin for Multi-State Logic.
- Published in:
- International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400170
- By:
- Publication type:
- Article
QDC-FET and QD-SWS Physics-Based Equivalent Circuit for ABM Simulations.
- Published in:
- International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400224
- By:
- Publication type:
- Article
Compact 1-Bit Full Adder and 2-Bit SRAMs Using n-SWS-FETs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400133
- By:
- Publication type:
- Article
3-Bit Analog-to-Digital Converter Using Multi-State Spatial Wave-Function Switched FETs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400145
- By:
- Publication type:
- Article
Modeling of Multi-State Si and Ge Cladded Quantum Dot Gate FETs Using Verilog and ABM Simulations.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 38, n. 3/4, p. N.PAG, doi. 10.1142/S0129156419400263
- By:
- Publication type:
- Article
Preface.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 38, n. 3/4, p. N.PAG, doi. 10.1142/S0129156419020026
- By:
- Publication type:
- Article
Integration of Quantum Dot Gate (QDG) in SWS-FETs for Multi-Bit Logic and QD-NVRAMs for Distributed In-Memory Computing.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 38, n. 3/4, p. N.PAG, doi. 10.1142/S0129156419400184
- By:
- Publication type:
- Article
Multi-Bit SRAMs, Registers, and Logic Using Quantum Well Channel SWS-FETs for Low-Power, High-Speed Computing.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 38, n. 3/4, p. N.PAG, doi. 10.1142/S012915641940024X
- By:
- Publication type:
- Article
Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling.
- Published in:
- International Journal of High Speed Electronics & Systems, 2019, v. 38, n. 3/4, p. N.PAG, doi. 10.1142/S0129156419400251
- By:
- Publication type:
- Article
A rare case of focal choroidal excavation associated choroidal neovascularization in angioid streaks.
- Published in:
- Oman Journal of Ophthalmology, 2019, v. 12, n. 3, p. 200, doi. 10.4103/ojo.OJO_61_2018
- By:
- Publication type:
- Article
Preface.
- Published in:
- International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 3/4, p. N.PAG, doi. 10.1142/S0129156418020020
- By:
- Publication type:
- Article
A Novel One SWS-FET Transistor for AND/OR Logic Gate.
- Published in:
- International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 3/4, p. N.PAG, doi. 10.1142/S0129156418400190
- By:
- Publication type:
- Article
Preface.
- Published in:
- 2018
- By:
- Publication type:
- Proceeding
Circuits and Simulation of Quaternary SRAM Using Quantum Dot Channel Field Effect Transistors (QDC-FETs).
- Published in:
- International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 1/2, p. N.PAG, doi. 10.1142/S0129156418400049
- By:
- Publication type:
- Article
An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 2, p. 1371, doi. 10.1007/s11664-017-5951-5
- By:
- Publication type:
- Article
QD floating gate NVRAM using QD channel for faster erasing.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 1, p. 36, doi. 10.1049/el.2017.2931
- By:
- Publication type:
- Article
Preface.
- Published in:
- International Journal of High Speed Electronics & Systems, 2017, v. 26, n. 3, p. -1, doi. 10.1142/S0129156417020025
- By:
- Publication type:
- Article
Spatial Wavefunction Switched (SWS) FET SRAM Circuits and Simulation.
- Published in:
- International Journal of High Speed Electronics & Systems, 2017, v. 26, n. 3, p. -1, doi. 10.1142/S0129156417400092
- By:
- Publication type:
- Article
Quantum Dot Channel (QDC) FETs with Wraparound II-VI Gate Insulators: Numerical Simulations.
- Published in:
- Journal of Electronic Materials, 2016, v. 45, n. 11, p. 5663, doi. 10.1007/s11664-016-4812-y
- By:
- Publication type:
- Article