Found: 30

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  • Impurity ‘Hot Spots’ in MBE HgCdTe/CdZnTe.

    Published in:
    Journal of Electronic Materials, 2018, v. 47, n. 10, p. 5671, doi. 10.1007/s11664-018-6523-z
    By:
    • Benson, J. D.;
    • Bubulac, L. O.;
    • Wang, A.;
    • Jacobs, R. N.;
    • Arias, J. M.;
    • Jaime-Vasquez, M.;
    • Smith, P. J.;
    • Almeida, L. A.;
    • Stoltz, A.;
    • Wijewarnasuriya, P. S.;
    • Yulius, A.;
    • Carmody, M.;
    • Reddy, M.;
    • Peterson, J.;
    • Johnson, S. M.;
    • Bangs, J.;
    • Lofgreen, D. D.
    Publication type:
    Article

  • Impact of CdZnTe Substrates on MBE HgCdTe Deposition.

    Published in:
    Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5418, doi. 10.1007/s11664-017-5599-1
    By:
    • Benson, J.;
    • Bubulac, L.;
    • Jaime-Vasquez, M.;
    • Arias, J.;
    • Smith, P.;
    • Jacobs, R.;
    • Markunas, J.;
    • Almeida, L.;
    • Stoltz, A.;
    • Wijewarnasuriya, P.;
    • Peterson, J.;
    • Reddy, M.;
    • Jones, K.;
    • Johnson, S.;
    • Lofgreen, D.
    Publication type:
    Article

  • Analysis of Etched CdZnTe Substrates.

    Published in:
    Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4502, doi. 10.1007/s11664-016-4642-y
    By:
    • Benson, J.;
    • Bubulac, L.;
    • Jaime-Vasquez, M.;
    • Lennon, C.;
    • Arias, J.;
    • Smith, P.;
    • Jacobs, R.;
    • Markunas, J.;
    • Almeida, L.;
    • Stoltz, A.;
    • Wijewarnasuriya, P.;
    • Peterson, J.;
    • Reddy, M.;
    • Jones, K.;
    • Johnson, S.;
    • Lofgreen, D.
    Publication type:
    Article

  • Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates.

    Published in:
    Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3076, doi. 10.1007/s11664-015-3822-5
    By:
    • Jacobs, R.;
    • Jaime Vasquez, M.;
    • Lennon, C.;
    • Nozaki, C.;
    • Almeida, L.;
    • Pellegrino, J.;
    • Arias, J.;
    • Taylor, C.;
    • Wissman, B.
    Publication type:
    Article

  • As-Received CdZnTe Substrate Contamination.

    Published in:
    Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3082, doi. 10.1007/s11664-015-3823-4
    By:
    • Benson, J.;
    • Bubulac, L.;
    • Jaime-Vasquez, M.;
    • Lennon, C.;
    • Smith, P.;
    • Jacobs, R.;
    • Markunas, J.;
    • Almeida, L.;
    • Stoltz, A.;
    • Arias, J.;
    • Wijewarnasuriya, P.;
    • Peterson, J.;
    • Reddy, M.;
    • Vilela, M.;
    • Johnson, S.;
    • Lofgreen, D.;
    • Yulius, A.;
    • Carmody, M.;
    • Hirsch, R.;
    • Fiala, J.
    Publication type:
    Article

  • Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe Deposition.

    Published in:
    Journal of Electronic Materials, 2014, v. 43, n. 11, p. 3993, doi. 10.1007/s11664-014-3338-4
    By:
    • Benson, J.;
    • Bubulac, L.;
    • Smith, P.;
    • Jacobs, R.;
    • Markunas, J.;
    • Jaime-Vasquez, M.;
    • Almeida, L.;
    • Stoltz, A.;
    • Wijewarnasuriya, P.;
    • Brill, G.;
    • Chen, Y.;
    • Peterson, J.;
    • Reddy, M.;
    • Vilela, M.;
    • Johnson, S.;
    • Lofgreen, D.;
    • Yulius, A.;
    • Bostrup, G.;
    • Carmody, M.;
    • Lee, D.
    Publication type:
    Article

  • A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds.

    Published in:
    Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3708, doi. 10.1007/s11664-014-3281-4
    By:
    • Stoltz, A.;
    • Benson, J.;
    • Jaime-Vasquez, M.;
    • Smith, P.;
    • Almeida, L.;
    • Jacobs, R.;
    • Markunas, J.;
    • Brogden, K.;
    • Brown, A.;
    • Lennon, C.;
    • Maloney, P.;
    • Supola, N.
    Publication type:
    Article

  • Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE HgCdTe.

    Published in:
    Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3224, doi. 10.1007/s11664-013-2781-y
    By:
    • Brown, A.;
    • Jaime-Vasquez, M.;
    • Almeida, L.;
    • Arias, J.;
    • Lennon, C.;
    • Jacobs, R.;
    • Pellegrino, J.;
    • Sivananthan, S.
    Publication type:
    Article

  • Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates.

    Published in:
    Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3217, doi. 10.1007/s11664-013-2780-z
    By:
    • Benson, J.;
    • Bubulac, L.;
    • Lennon, C.;
    • Jacobs, R.;
    • Smith, P.;
    • Markunas, J.;
    • Jaime-Vasquez, M.;
    • Almeida, L.;
    • Stoltz, A.;
    • Arias, J.;
    • Brill, G.;
    • Chen, Y.;
    • Wijewarnasuriya, P.;
    • Vilela, M.;
    • Peterson, J.;
    • Johnson, S.;
    • Lofgreen, D.;
    • Rhiger, D.;
    • Patten, E.;
    • Bangs, J.
    Publication type:
    Article

  • TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates.

    Published in:
    Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3142, doi. 10.1007/s11664-013-2688-7
    By:
    • Kim, Jae;
    • Jacobs, R.;
    • Almeida, L.;
    • Jaime-Vasquez, M.;
    • Nozaki, C.;
    • Smith, David
    Publication type:
    Article

  • Growth and Analysis of HgCdTe on Alternate Substrates.

    Published in:
    Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2971, doi. 10.1007/s11664-012-2089-3
    By:
    • Benson, J.D.;
    • Bubulac, L.O.;
    • Smith, P.J.;
    • Jacobs, R.N.;
    • Markunas, J.K.;
    • Jaime-Vasquez, M.;
    • Almeida, L.A.;
    • Stoltz, A.;
    • Arias, J.M.;
    • Brill, G.;
    • Chen, Y.;
    • Wijewarnasuriya, P.S.;
    • Farrell, S.;
    • Lee, U.
    Publication type:
    Article

  • Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic Annealing.

    Published in:
    Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2975, doi. 10.1007/s11664-012-2169-4
    By:
    • Jaime-Vasquez, M.;
    • Jacobs, R.N.;
    • Nozaki, C.;
    • Benson, J.D.;
    • Almeida, L.A.;
    • Arias, J.;
    • Pellegrino, J.
    Publication type:
    Article

  • Development of MBE II-VI Epilayers on GaAs(211)B.

    Published in:
    Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2707, doi. 10.1007/s11664-012-2218-z
    By:
    • Jacobs, R.N.;
    • Nozaki, C.;
    • Almeida, L.A.;
    • Jaime-Vasquez, M.;
    • Lennon, C.;
    • Markunas, J.K.;
    • Benson, D.;
    • Smith, P.;
    • Zhao, W.F.;
    • Smith, D.J.;
    • Billman, C.;
    • Arias, J.;
    • Pellegrino, J.
    Publication type:
    Article

  • Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy.

    Published in:
    Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1733, doi. 10.1007/s11664-011-1673-2
    By:
    • ZHAO, W.;
    • JACOBS, R.;
    • JAIME-VASQUEZ, M.;
    • BUBULAC, L.;
    • SMITH, DAVID
    Publication type:
    Article

  • Dislocation Analysis in (112)B HgCdTe/CdTe/Si.

    Published in:
    Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1847, doi. 10.1007/s11664-011-1670-5
    By:
    • Benson, J.;
    • Farrell, S.;
    • Brill, G.;
    • Chen, Y.;
    • Wijewarnasuriya, P.;
    • Bubulac, L.;
    • Smith, P.;
    • Jacobs, R.;
    • Markunas, J.;
    • Jaime-Vasquez, M.;
    • Almeida, L.;
    • Stoltz, A.;
    • Lee, U.;
    • Vilela, M.;
    • Peterson, J.;
    • Johnson, S.;
    • Lofgreen, D.;
    • Rhiger, D.;
    • Patten, E.;
    • Goetz, P.
    Publication type:
    Article

  • The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism.

    Published in:
    Journal of Electronic Materials, 2011, v. 40, n. 3, p. 280, doi. 10.1007/s11664-010-1505-9
    By:
    • Bubulac, L.;
    • Benson, J.D.;
    • Jacobs, R.N.;
    • Stoltz, A.J.;
    • Jaime-Vasquez, M.;
    • Almeida, L.;
    • Wang, A.;
    • Wang, L.;
    • Hellmer, R.;
    • Golding, T.;
    • Dinan, J.H.;
    • Carmody, M.;
    • Wijewarnasuriya, P.S.;
    • Lee, M.F.;
    • Vilela, M.F.;
    • Peterson, J.;
    • Johnson, S.M.;
    • Lofgreen, D.F.;
    • Rhiger, D.
    Publication type:
    Article

  • Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors.

    Published in:
    Journal of Electronic Materials, 2010, v. 39, n. 7, p. 951, doi. 10.1007/s11664-010-1152-1
    By:
    • Jaime-Vasquez, M.;
    • Jacobs, R. N.;
    • Benson, J. D.;
    • Stoltz, A. J.;
    • Almeida, L. A.;
    • Bubulac, L. O.;
    • Chen, Y.;
    • Brill, G.
    Publication type:
    Article

  • Characterization of Dislocations in (112)B HgCdTe/CdTe/Si.

    Published in:
    Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1080, doi. 10.1007/s11664-010-1262-9
    By:
    • Benson, J. D.;
    • Bubulac, L. O.;
    • Smith, P. J.;
    • Jacobs, R. N.;
    • Markunas, J. K.;
    • Jaime-Vasquez, M.;
    • Almeida, L. A.;
    • Stoltz, A. J.;
    • Wijewarnasuriya, P. S.;
    • Brill, G.;
    • Chen, Y.;
    • Lee, U.;
    • Vilela, M. F.;
    • Peterson, J.;
    • Johnson, S. M.;
    • Lofgreen, D. D.;
    • Rhiger, D.;
    • Patten, E. A.;
    • Goetz, P. M.
    Publication type:
    Article

  • Topography and Dislocations in (112)B HgCdTe/CdTe/Si.

    Published in:
    Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1771, doi. 10.1007/s11664-009-0758-7
    By:
    • Benson, J. D.;
    • Smith, P. J.;
    • Jacobs, R. N.;
    • Markunas, J. K.;
    • Jaime-Vasquez, M.;
    • Almeida, L. A.;
    • Stoltz, A.;
    • Bubulac, L. O.;
    • Groenert, M.;
    • Wijewarnasuriya, P. S.;
    • Brill, G.;
    • Chen, Y.;
    • Lee, U.
    Publication type:
    Article

  • Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy.

    Published in:
    Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1480, doi. 10.1007/s11664-008-0519-z
    By:
    • JACOBS, R. N.;
    • ALMEIDA, L. A.;
    • MARKUNAS, J.;
    • PELLEGRINO, J.;
    • GROENERT, M.;
    • JAIME-VASQUEZ, M.;
    • MAHADIK, N.;
    • ANDREWS, C.;
    • QADRI, S. B.;
    • LEE, T.;
    • KIM, M.
    Publication type:
    Article

  • Structural Analysis of CdTe Hetero-epitaxy on (211) Si.

    Published in:
    Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1231, doi. 10.1007/s11664-008-0469-5
    By:
    • BENSON, J. D.;
    • JACOBS, R. N.;
    • MARKUNAS, J. K.;
    • JAIME-VASQUEZ, M.;
    • SMITH, P. J.;
    • ALMEIDA, L. A.;
    • MARTINKA, M.;
    • VILELA, M. F.;
    • LEE, U.
    Publication type:
    Article

  • Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors.

    Published in:
    Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1247, doi. 10.1007/s11664-008-0460-1
    By:
    • JAIME-VASQUEZ, M.;
    • MARTINKA, M.;
    • STOLTZ, A. J.;
    • JACOBS, R. N.;
    • BENSON, J. D.;
    • ALMEIDA, L. A.;
    • MARKUNAS, J. K.
    Publication type:
    Article

  • Nucleation of ZnTe on the As-Terminated Si(112) Surface.

    Published in:
    Journal of Electronic Materials, 2007, v. 36, n. 8, p. 905, doi. 10.1007/s11664-007-0128-2
    By:
    • Jaime-Vasquez, M.;
    • Martinka, M.;
    • Jacobs, R. N.;
    • Benson, J. D.
    Publication type:
    Article

  • Effects of a-Si:H Resist Vacuum-Lithography Processing on HgCdTe.

    Published in:
    Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1474, doi. 10.1007/s11664-006-0287-6
    By:
    • Jacobs, R. N.;
    • Robinson, E. W.;
    • Jaime-Vasquez, M.;
    • Stoltz, A. J.;
    • Markunas, J.;
    • Almeida, L. A.;
    • Boyd, P. R.;
    • Dinan, J. H.;
    • Salamanca-Riba, L.
    Publication type:
    Article

  • Surface Structure of (111)A HgCdTe.

    Published in:
    Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1434, doi. 10.1007/s11664-006-0280-0
    By:
    • Benson, J. D.;
    • Varesi, J. B.;
    • Stoltz, A. J.;
    • Smith, E. P. G.;
    • Johnson, S. M.;
    • Jaime-Vasquez, M.;
    • Markunas, J. K.;
    • Almeida, L. A.;
    • Molstad, J. C.
    Publication type:
    Article

  • Examination of the Effects of High-density Plasmas on the Surface of HgCdTe.

    Published in:
    Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1461, doi. 10.1007/s11664-006-0284-9
    By:
    • Stoltz, A. J.;
    • Jaime-Vasquez, M.;
    • Benson, J. D.;
    • Varesi, J. B.;
    • Martinka, M.
    Publication type:
    Article

  • In-situ Spectroscopic Study of the As and Te on the Si (112) Surface for High-quality Epitaxial Layers.

    Published in:
    Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1455, doi. 10.1007/s11664-006-0283-x
    By:
    • Jaime-Vasquez, M.;
    • Martinka, M.;
    • Jacobs, R. N.;
    • Groenert, M.
    Publication type:
    Article

  • Investigation of HgCdTe Surface Films and Their Removal.

    Published in:
    Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1443, doi. 10.1007/s11664-006-0281-z
    By:
    • Varesi, J. B.;
    • Benson, J. D.;
    • Jaime-Vasquez, M.;
    • Martinka, M.;
    • Stoltz, A. J.;
    • Dinan, H. H.
    Publication type:
    Article

  • Spatially resolved microchemical analysis of chromate-conversion-coated aluminum alloy AA2024-T3.

    Published in:
    Surface & Interface Analysis: SIA, 2002, v. 33, n. 10/11, p. 796, doi. 10.1002/sia.1456
    By:
    • Jaime Vasquez, M.;
    • Kearns, J. R.;
    • Halada, G. P.;
    • Clayton, C. R.
    Publication type:
    Article

  • On the nature of the chromate conversion coating formed on intermetallic constituents of AA2024-T3.

    Published in:
    Surface & Interface Analysis: SIA, 2002, v. 33, n. 7, p. 607, doi. 10.1002/sia.1428
    By:
    • Jaime Vasquez, M.;
    • Halada, G. P.;
    • Clayton, C. R.;
    • Longtin, J. P.
    Publication type:
    Article