Found: 7
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Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1164, doi. 10.1049/el.2014.1747
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- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 14, p. 1164, doi. 10.1049/el.2014.1747
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- Publication type:
- Article
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation.
- Published in:
- ETRI Journal, 2016, v. 38, n. 1, p. 133, doi. 10.4218/etrij.16.0115.0019
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- Article
Epitaxial Layer Design for High Performance GaAs pHEMT SPDT MMIC Switches.
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- ETRI Journal, 2009, v. 31, n. 3, p. 342, doi. 10.4218/etrij.09.0208.0348
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- Article
X-band MMIC low-noise amplifier MMIC on SiC substrate using 0.25-μm ALGaN/GaN HEMT technology.
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- Microwave & Optical Technology Letters, 2014, v. 56, n. 1, p. 96, doi. 10.1002/mop.28044
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- Article
Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors.
- Published in:
- Microwave & Optical Technology Letters, 2012, v. 54, n. 9, p. 2103, doi. 10.1002/mop.27036
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- Article
A 1-12-GHz variable-gain low-noise amplifier MMIC using 0.25-μm SiGe BiCMOS technology.
- Published in:
- Microwave & Optical Technology Letters, 2012, v. 54, n. 8, p. 1935, doi. 10.1002/mop.26936
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- Article