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Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. II. Discrete Mobility Spectrum Analysis.
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- Russian Physics Journal, 2023, v. 65, n. 10, p. 1716, doi. 10.1007/s11182-023-02822-6
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- Article
Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. I. A Review of Mobility Spectrum Analysis Methods.
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- Russian Physics Journal, 2023, v. 65, n. 9, p. 1538, doi. 10.1007/s11182-023-02799-2
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- Article
Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 13, p. 2221, doi. 10.3390/nano12132221
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- Article
Single-photon avalanche diode detectors based on group IV materials.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 253, doi. 10.1007/s13204-021-01667-0
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- Article
Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 395, doi. 10.1007/s13204-021-01704-y
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- Article
Admittance of barrier nanostructures based on MBE HgCdTe.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z
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- Article
Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures.
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- Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3714, doi. 10.1007/s11664-021-08877-w
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- Article
Epitaxial fabrication of 2D materials of group IV elements.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4375, doi. 10.1007/s13204-020-01372-4
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- Article
Unipolar superlattice structures based on MBE HgCdTe for infrared detection.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4571, doi. 10.1007/s13204-020-01297-y
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- Article
Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4971, doi. 10.1007/s13204-020-01327-9
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- Article
Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2489, doi. 10.1007/s13204-019-01081-7
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- Article
Interaction between islands in kinetic models of epitaxial growth of quantum dots.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2527, doi. 10.1007/s13204-019-00965-y
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- Article
TEM studies of structural defects in HgTe/HgCdTe quantum wells.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2867, doi. 10.1007/s13204-019-01142-x
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- Article
Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE.
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- Russian Physics Journal, 2020, v. 63, n. 2, p. 290, doi. 10.1007/s11182-020-02034-2
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- Article
Interface Studies in HgTe/HgCdTe Quantum Wells.
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- Physica Status Solidi (B), 2020, v. 257, n. 5, p. 1, doi. 10.1002/pssb.201900598
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- Article
Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures.
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- Applied Nanoscience, 2019, v. 9, n. 5, p. 617, doi. 10.1007/s13204-018-0760-6
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- Article
Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study.
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- Applied Nanoscience, 2019, v. 9, n. 5, p. 725, doi. 10.1007/s13204-018-0679-y
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- Article
Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride.
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- Opto-Electronics Review, 2019, v. 27, n. 1, p. 14, doi. 10.1016/j.opelre.2019.01.002
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- Article
Nanostructures with Ge–Si quantum dots for infrared photodetectors.
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- Opto-Electronics Review, 2018, v. 26, n. 3, p. 195, doi. 10.1016/j.opelre.2018.06.002
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- Article
Generation of Surface Defects in Epitaxial Cd<sub>x</sub>Hg<sub>1-x</sub>Te Layers by Soft X-ray Radiation of Laser Plasma.
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- Russian Physics Journal, 2018, v. 60, n. 12, p. 2197, doi. 10.1007/s11182-018-1346-1
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- Article
Defects in Arsenic Implanted р -n- and n -p- Structures Based on MBE Grown CdHgTe Films.
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- Russian Physics Journal, 2018, v. 60, n. 10, p. 1752, doi. 10.1007/s11182-018-1278-9
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- Article
Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies.
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- Opto-Electronics Review, 2017, v. 25, n. 2, p. 148, doi. 10.1016/j.opelre.2017.03.007
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- Article
Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1916-0
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- Article
Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy.
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- Russian Physics Journal, 2016, v. 59, n. 3, p. 442, doi. 10.1007/s11182-016-0792-x
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- Article
Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1276-1
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- Article
Background donor concentration in HgCdTe.
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- Opto-Electronics Review, 2015, v. 23, n. 3, p. 200, doi. 10.1515/oere-2015-0029
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- Article
Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy.
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- Semiconductors, 2015, v. 49, n. 3, p. 367, doi. 10.1134/S1063782615030148
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- Article
Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment.
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- Semiconductors, 2014, v. 48, n. 2, p. 195, doi. 10.1134/S1063782614020134
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- Article
Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs.
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- Opto-Electronics Review, 2013, v. 21, n. 4, p. 390, doi. 10.2478/s11772-013-0103-9
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- Article
Electrical properties of HgCdTe films grown by MOCVD and doped with as.
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- Opto-Electronics Review, 2013, v. 21, n. 2, p. 220, doi. 10.2478/s11772-013-0086-6
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- Article
Analysis of the photoluminescence spectra of CdHgte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy.
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- Russian Physics Journal, 2013, v. 55, n. 8, p. 910, doi. 10.1007/s11182-013-9900-3
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- Article
Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions.
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- Technical Physics Letters, 2013, v. 39, n. 1, p. 16, doi. 10.1134/S1063785013010136
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- Article
Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates.
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- Opto-Electronics Review, 2012, v. 20, n. 4, p. 375, doi. 10.2478/s11772-012-0048-4
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- Article
Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates.
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- Semiconductors, 2012, v. 46, n. 10, p. 1341, doi. 10.1134/S1063782612100065
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- Article
Defect structure of CdHgTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment.
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- Semiconductors, 2011, v. 45, n. 9, p. 1124, doi. 10.1134/S1063782611090090
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- Article
Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 328, doi. 10.2478/s11772-010-1016-9
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- Article
Design and Characterization of Resonator Mirrors for Microlasers on the Base of YAlO<sub>3</sub> Single Crystals Activated with Nd<sub>3+</sub> and Tm<sub>3+</sub> Ions.
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- Acta Physica Polonica: A, 2010, v. 117, n. 1, p. 244, doi. 10.12693/APhysPolA.117.244
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- Article
Effect of annealing on the optical and photoelectrical properties of Cd<sub> x</sub>Hg<sub>1 − x</sub>Te heteroepitaxial structures for the middle infrared range.
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- Technical Physics Letters, 2009, v. 35, n. 2, p. 147, doi. 10.1134/S1063785009020151
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- Article
Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching.
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- Semiconductors, 2008, v. 42, n. 12, p. 1413, doi. 10.1134/S1063782608120075
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- Article
Ion-beam-induced modification of the electrical properties of vacancy-doped mercury cadmium telluride.
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- Technical Physics Letters, 2008, v. 34, n. 11, p. 981, doi. 10.1134/S1063785008110242
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- Article
Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching.
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- Russian Physics Journal, 2008, v. 51, n. 9, p. 936, doi. 10.1007/s11182-009-9134-6
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- Article
The comparative analysis and optimization of the free-running Tm<sup>3+</sup>:YAP and Tm<sup>3+</sup>:YAG microlasers.
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- Applied Physics B: Lasers & Optics, 2007, v. 88, n. 3, p. 433, doi. 10.1007/s00340-007-2718-3
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- Article
Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal.
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- Semiconductors, 2007, v. 41, n. 7, p. 804, doi. 10.1134/S1063782607070068
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- Article
Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-Cd<sub>x</sub>Hg<sub>1-x</sub>Te.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 53, doi. 10.15407/spqeo8.01.053
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- Article
Defect Structure Rebuilding by Ion Beam Milling of As and Sb Doped p-Hg<sub>1-x</sub>Cd<sub>x</sub>Te.
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- Physica Status Solidi (B), 2002, v. 229, n. 1, p. 279, doi. 10.1002/1521-3951(200201)229:1<279::AID-PSSB279>3.0.CO;2-0
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- Article