Found: 36
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Novel UV-B Phototherapy With a Light-Emitting Diode Device Prevents Atherosclerosis by Augmenting Regulatory T-Cell Responses in Mice.
- Published in:
- Journal of the American Heart Association, 2024, v. 13, n. 2, p. 1, doi. 10.1161/JAHA.123.031639
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- Article
Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200836
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- Publication type:
- Article
Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200831
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- Publication type:
- Article
Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arrays.
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- Nanophotonics (21928606), 2023, v. 12, n. 15, p. 3077, doi. 10.1515/nanoph-2023-0051
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- Article
Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs.
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- Nanophotonics (21928606), 2022, v. 11, n. 21, p. 4793, doi. 10.1515/nanoph-2022-0388
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- Article
Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions.
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- Physica Status Solidi (B), 2022, v. 259, n. 6, p. 1, doi. 10.1002/pssb.202100221
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- Article
Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions.
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- Nanophotonics (21928606), 2021, v. 10, n. 13, p. 3441, doi. 10.1515/nanoph-2021-0210
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- Article
Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-74585-w
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- Article
Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 10, p. 2075, doi. 10.3390/nano10102075
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- Publication type:
- Article
Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 14, p. 1, doi. 10.1002/pssa.201900864
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- Publication type:
- Article
High Crystallinity and Highly Relaxed Al<sub>0.60</sub>Ga<sub>0.40</sub>N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 14, p. 1, doi. 10.1002/pssa.201900868
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- Article
Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 7, p. 1354, doi. 10.3390/nano10071354
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- Publication type:
- Article
Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900713
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- Publication type:
- Article
Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900774
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- Publication type:
- Article
Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900715
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- Publication type:
- Article
Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires.
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- Nanophotonics (21928606), 2020, v. 9, n. 1, p. 101, doi. 10.1515/nanoph-2019-0328
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- Publication type:
- Article
Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 4, p. 788, doi. 10.3390/app9040788
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- Publication type:
- Article
Tuning the Resonant Frequency of a Surface Plasmon by Double-Metallic Ag/Au Nanoparticles for High-Efficiency Green Light-Emitting Diodes.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 2, p. 305, doi. 10.3390/app9020305
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- Publication type:
- Article
A GaN‐Based VCSEL with a Convex Structure for Optical Guiding.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700648
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- Publication type:
- Article
Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700506
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- Publication type:
- Article
Annealing of the sputtered AlN buffer layer on r-plane sapphire and its effect on a-plane GaN crystalline quality.
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- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600723
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- Publication type:
- Article
Theoretical investigation of nitride nanowire-based quantum-shell lasers.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600867
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- Publication type:
- Article
GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1127, doi. 10.1002/pssb.201451507
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- Article
Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 920, doi. 10.1002/pssa.201431730
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- Publication type:
- Article
Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 3, p. 211, doi. 10.1002/pssr.201307023
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- Article
Nitride-based hetero-field-effect-transistor-type photosensors with extremely high photosensitivity.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 3, p. 215, doi. 10.1002/pssr.201206483
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- Publication type:
- Article
Properties of nitride-based photovoltaic cells under concentrated light illumination.
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- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 4, p. 145, doi. 10.1002/pssr.201206038
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- Article
Cover Picture: Properties of nitride-based photovoltaic cells under concentrated light illumination (Phys. Status Solidi RRL 4/2012).
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 4, p. n/a, doi. 10.1002/pssr.201206038
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- Publication type:
- Article
Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 3, p. 501, doi. 10.1002/pssa.201100379
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- Article
Frontispiece: Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes (Phys. Status Solidi A 7/2011).
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- 2011
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- Publication type:
- Other
Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1594, doi. 10.1002/pssa.201001037
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- Publication type:
- Article
Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1607, doi. 10.1002/pssa.201001020
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- Publication type:
- Article
AlGaN/GaInN/GaN heterostructure field-effect transistor.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1614, doi. 10.1002/pssa.201001153
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- Publication type:
- Article
Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 5, p. 1191, doi. 10.1002/pssa.201001019
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- Publication type:
- Article
Activation energy of Mg in a -plane Ga<sub>1- x </sub>In <sub>x</sub> N (0 < x < 0.17).
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- Physica Status Solidi (B), 2009, v. 246, n. 6, p. 1188, doi. 10.1002/pssb.200880826
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- Article
X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN.
- Published in:
- Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1524, doi. 10.1002/pssb.200565344
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- Publication type:
- Article