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Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching.
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- Semiconductors, 2008, v. 42, n. 12, p. 1413, doi. 10.1134/S1063782608120075
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- Article
Vibrational spectroscopy of amorphous carbon modified with Pt.
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- Semiconductors, 2008, v. 42, n. 9, p. 1113, doi. 10.1134/S1063782608090194
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Platinum nanoclusters encapsulated in amorphous carbon.
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- Semiconductors, 2008, v. 42, n. 3, p. 325, doi. 10.1134/S1063782608030159
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Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi<sub>1 − x </sub>Sb<sub> x </sub> (0.06 ≤ x ≤ 0.20).
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- Semiconductors, 2007, v. 41, n. 10, p. 1178, doi. 10.1134/S1063782607100090
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Allotropic composition of amorphous carbon.
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- Semiconductors, 2007, v. 41, n. 8, p. 946, doi. 10.1134/S1063782607080155
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Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal.
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- Semiconductors, 2007, v. 41, n. 7, p. 804, doi. 10.1134/S1063782607070068
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Negative luminescence and devices based on this phenomenon.
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- Semiconductors, 2007, v. 41, n. 3, p. 247, doi. 10.1134/S1063782607030013
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Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts.
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- Semiconductors, 2005, v. 39, n. 12, p. 1361, doi. 10.1134/1.2140304
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Temperature Dependence of the Threshold Current of QW Lasers.
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- Semiconductors, 2005, v. 39, n. 10, p. 1210, doi. 10.1134/1.2085272
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Raman Spectroscopy Study of the Carbon Structure of a-C:(H, Cu) and a-C:(H, Co) Composite Films.
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- Semiconductors, 2005, v. 39, n. 8, p. 934, doi. 10.1134/1.2010688
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Transport of Protons in Amorphous Hydrogenated Carbon.
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- Semiconductors, 2005, v. 39, n. 8, p. 941, doi. 10.1134/1.2010689
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Magnetic Properties of Iron-Modified Amorphous Carbon.
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- Semiconductors, 2005, v. 39, n. 7, p. 840, doi. 10.1134/1.1992645
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- Article
Interstitial Carbon Showing up in the Absorption Spectra of Natural Diamonds.
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- Technical Physics, 2005, v. 50, n. 6, p. 711, doi. 10.1134/1.1947345
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- Article
Photosensitivity of GaAs : N(GaP : N)/GaAs(GaP) heterojunctions in linearly polarized radiation.
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- Technical Physics, 1999, v. 44, n. 6, p. 732, doi. 10.1134/1.1259456
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- Article
The Generation of Stimulated Radiation and the High-Temperature Photoluminescence in Cd<sub>X</sub>Hg<sub>1−X</sub>Te Layers.
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- Physica Status Solidi (B), 1985, v. 130, n. 1, p. K43, doi. 10.1002/pssb.2221300150
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The Effect of Electron-Electron Interaction on the Cyclotron Resonance Linewidth in n-GaAs.
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- Physica Status Solidi (B), 1985, v. 127, n. 2, p. K171, doi. 10.1002/pssb.2221270253
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Plasma reflection and hole optical effective mass in p-HgTe.
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- Physica Status Solidi (B), 1983, v. 119, n. 1, p. 159, doi. 10.1002/pssb.2221190117
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Phonon-assisted cyclotron resonance in semiconductors.
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- Physica Status Solidi (B), 1978, v. 90, n. 1, p. 11, doi. 10.1002/pssb.2220900102
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The Frequency Dependent Dielectric Function of Gapless Semiconductors in a Magnetic Field.
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- Physica Status Solidi (B), 1978, v. 87, n. 1, p. 381, doi. 10.1002/pssb.2220870145
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- Article
Photoconductivity of HgTe in magnetic field at 337 μm.
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- Physica Status Solidi (B), 1978, v. 85, n. 1, p. K39, doi. 10.1002/pssb.2220850157
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The electron-electron interaction in gapless semiconductors.
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- Physica Status Solidi (B), 1975, v. 69, n. 2, p. 717, doi. 10.1002/pssb.2220690247
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Helicons and Non-Resonant Cyclotron Absorption in HgTe.
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- Physica Status Solidi (B), 1970, v. 38, n. 2, p. A101, doi. 10.1002/pssb.19700380240
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The Valence Band of HgTe.
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- Physica Status Solidi (B), 1969, v. 32, n. 1, p. K83, doi. 10.1002/pssb.19690320173
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Catalytic layers for fuel cells based on polyaniline and α-C〈Pt〉 composite obtained by magnetron sputtering.
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- Technical Physics Letters, 2007, v. 33, n. 7, p. 545, doi. 10.1134/S1063785007070024
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1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films.
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- Technical Physics Letters, 2007, v. 33, n. 6, p. 471, doi. 10.1134/S1063785007060089
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- Article
Optical Properties of Interstellar Medium.
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- Technical Physics Letters, 2005, v. 31, n. 10, p. 878, doi. 10.1134/1.2121845
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Forming Composites Based on Mineral Fibers.
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- Technical Physics Letters, 2005, v. 31, n. 10, p. 843, doi. 10.1134/1.2121833
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- Article
The N3 Center Luminescence Quenched by Nitrogen Impurity in Natural Diamond.
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- Technical Physics Letters, 2004, v. 30, n. 10, p. 802, doi. 10.1134/1.1813714
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Electrical Properties of Cd[sub x]Hg[sub 1 – ][sub x]Te and Zn[sub x]Cd[sub y]Hg[sub 1 – ][sub x][sub – ][sub y]Te Modified by Low-Energy Ion Bombardment.
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- Technical Physics Letters, 2002, v. 28, n. 11, p. 955, doi. 10.1134/1.1526895
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Variation of the Amorphous Carbon Density under the Action of 10–500 eV Carbon Atoms.
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- Technical Physics Letters, 2002, v. 28, n. 10, p. 851, doi. 10.1134/1.1519028
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- Article
Negative Ion Emission Accompanying the Field Electron Emission from Amorphous Hydrogenated Carbon.
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- Technical Physics Letters, 2001, v. 27, n. 8, p. 649, doi. 10.1134/1.1398957
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- Article
Copper in α-C:H Films: Low Temperatures.
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- Technical Physics Letters, 2000, v. 26, n. 12, p. 1055, doi. 10.1134/1.1337251
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- Article
The Electron Paramagnetic Resonance in Copper-Modified Amorphous Carbon.
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- Technical Physics Letters, 2000, v. 26, n. 12, p. 1098, doi. 10.1134/1.1337266
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IR Spectroscopy of Copper-Intercalated Graphite Nanoclusters in Amorphous Carbon.
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- Technical Physics Letters, 2000, v. 26, n. 7, p. 623, doi. 10.1134/1.1262933
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- Article
Hydroxyl Groups and a-C:H and a-C:H(Me) Structures.
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- Technical Physics Letters, 2000, v. 26, n. 6, p. 520, doi. 10.1134/1.1262897
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Scanning tunneling spectroscopy of amorphous carbon: tunneling model.
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- Technical Physics Letters, 1999, v. 25, n. 12, p. 999, doi. 10.1134/1.1262707
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Electrical properties of Schottky diodes using high-resistivity CdTe crystals.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 642, doi. 10.1134/1.1262583
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Size distribution of copper nanoclusters in amorphous carbon.
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- Technical Physics Letters, 1999, v. 25, n. 3, p. 198, doi. 10.1134/1.1262421
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Study of the surface of diamondlike carbon films doped with copper.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 800, doi. 10.1134/1.1262273
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Appearance of molecular hydrogen in the ultraviolet spectra of diamond-like carbon.
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- Technical Physics Letters, 1997, v. 23, n. 6, p. 461, doi. 10.1134/1.1261818
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Spectroscopic investigation of the thermal stability of bound hydrogen in a-C : H.
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- Technical Physics Letters, 1997, v. 23, n. 4, p. 251, doi. 10.1134/1.1261834
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Raman Spectroscopy of Amorphous Carbon Modified with Iron.
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- Semiconductors, 2003, v. 37, n. 4, p. 473, doi. 10.1134/1.1568471
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Analysis of the Size-Distribution Function of Metallic Nanoclusters in a Hydrogenated Amorphous Carbon Host.
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- Semiconductors, 2002, v. 36, n. 7, p. 743, doi. 10.1134/1.1493741
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- Article
Vibratonal Spectroscopy of a-C:H(Co).
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- Semiconductors, 2002, v. 36, n. 6, p. 695, doi. 10.1134/1.1485673
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- Article
Density of States in Amorphous Carbon and Its Modification by Annealing.
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- Semiconductors, 2002, v. 36, n. 1, p. 110, doi. 10.1134/1.1434819
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Scanning Tunneling Spectroscopy of a-C:H and a-C:(H, Cu) Films Prepared by Magnetron Sputtering.
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- Semiconductors, 2001, v. 35, n. 12, p. 1398, doi. 10.1134/1.1427978
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Optical Properties of Amorphous Carbon Films Deposited by Magnetron Sputtering of Graphite.
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- Semiconductors, 2001, v. 35, n. 2, p. 220, doi. 10.1134/1.1349936
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- Article
Investigation of Surface Morphology of Copper-Modified Amorphous Carbon Films.
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- Semiconductors, 2001, v. 35, n. 2, p. 230, doi. 10.1134/1.1349938
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The Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy of Amorphous Carbon.
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- Semiconductors, 2000, v. 34, n. 12, p. 1355, doi. 10.1134/1.1331790
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- Article
Vibration Modes of Carbon in Hydrogenated Amorphous Carbon Modified with Copper.
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- Semiconductors, 2000, v. 34, n. 12, p. 1391, doi. 10.1134/1.1331797
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- Article