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XRD and SEM analyses of structural properties of La<sub>x</sub>Ba1−xMnO<sub>3</sub> solid solutions.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2024, v. 38, n. 24, p. 1, doi. 10.1142/S0217979224503272
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Electronic, optical and elastic properties of AgCuS.
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- Chalcogenide Letters, 2024, v. 21, n. 7, p. 493, doi. 10.15251/CL.2024.217.493
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Photoluminescence and spectroscopic ellipsometry of single crystal MnGa<sub>2</sub>S<sub>4</sub>.
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- Bulletin of Materials Science, 2024, v. 47, n. 2, p. 1, doi. 10.1007/s12034-024-03197-1
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Optical and electronic properties of defect chalcopyrite ZnGa<sub>2</sub>S<sub>4</sub>.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2024, v. 38, n. 1, p. 1, doi. 10.1142/S0217979224500073
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Infrared photoluminescence and dynamic properties of ZnGa<sub>2</sub>Se<sub>4</sub>.
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- Modern Physics Letters B, 2023, v. 37, n. 34, p. 1, doi. 10.1142/S021798492350166X
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Mn Impurity in InN Nanoribbon: an Ab Initio Investigation.
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- Journal of Superconductivity & Novel Magnetism, 2023, v. 36, n. 10-12, p. 1983, doi. 10.1007/s10948-023-06641-1
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First Principle Calculation of Magnetic Properties of Doped Mn:ZnGa<sub>2</sub>S<sub>4</sub>.
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- Journal of Superconductivity & Novel Magnetism, 2022, v. 35, n. 5, p. 1107, doi. 10.1007/s10948-022-06147-2
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Electronic and optical properties of GeS and GeS:Gd.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2021, v. 35, n. 30, p. 1, doi. 10.1142/S0217979221503057
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First principle calculation of electronic, optical and magnetic properties of Zn1−xFexSe compound.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2021, v. 35, n. 28, p. 1, doi. 10.1142/S0217979221502787
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Probabilistic model of structural phase transition in perovskites.
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- Modern Physics Letters B, 2021, v. 35, n. 12, p. N.PAG, doi. 10.1142/S0217984921502110
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Fabrication of a Ge–GeS:Nd Heterojunction and Investigation of the Spectral Characteristics.
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- Semiconductors, 2020, v. 54, n. 11, p. 1406, doi. 10.1134/S1063782620110044
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Structural and thermal properties of Cu1.75−xMxTe crystals.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2020, v. 34, n. 19, p. N.PAG, doi. 10.1142/S0217979220501805
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Effect of high intense electron beam irradiation on structural and Raman properties of boron carbide micro powder.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2020, v. 34, n. 4, p. N.PAG, doi. 10.1142/S0217979220500083
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Behavior of thermal properties of AgCu1−xFexS compounds under non-isothermal conditions.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 28, p. N.PAG, doi. 10.1142/S0217979219503399
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Electron structure and density of states' calculations of Ag<sub>2</sub>S and Ag<sub>2</sub>Se crystals from first-principle.
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- Modern Physics Letters B, 2019, v. 33, n. 21, p. N.PAG, doi. 10.1142/S0217984919502427
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Influence of spin–orbit interaction on band structure of TlInSe<sub>2</sub>.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 16, p. N.PAG, doi. 10.1142/S0217979219501613
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Neutron diffraction study of the crystal structure of TlInSe<sub>2</sub> at high pressure.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 15, p. N.PAG, doi. 10.1142/S0217979219501492
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Effect of gamma irradiation on microstructure of the layered Ge0.995Nd0.005S.
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- Modern Physics Letters B, 2019, v. 33, n. 9, p. N.PAG, doi. 10.1142/S0217984919501045
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Electronic structure and density of states in hexagonal BaMnO3.
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- Modern Physics Letters B, 2018, v. 32, n. 17, p. N.PAG, doi. 10.1142/S0217984918501865
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First-principle calculation of the electronic structure, DOS and effective mass TlInSe<sub>2</sub>.
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- Modern Physics Letters B, 2017, v. 31, n. 14, p. -1, doi. 10.1142/S021798491750155X
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Vacancy Formation Energy for the Charged and Neutral States of TlGaSe<sub>2</sub> Crystal.
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- Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2017, v. 39, n. 5, p. 657, doi. 10.15407/mfint.39.05.0657
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Ab initio calculations of the electron spectrum and density of states of TlFeS and TlFeSe crystals.
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- Semiconductors, 2017, v. 51, n. 4, p. 473, doi. 10.1134/S1063782617040078
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First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS<sub>2</sub> Crystal.
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- Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2016, v. 38, n. 8, p. 1019, doi. 10.15407/mfint.38.08.1019
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