Works by Ishikawa, Yukari

Results: 16

Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200872

By:

Kowaki, Taketo;
Matsumura, Wataru;
Hanasaku, Koki;
Okuno, Ryo;
Inahara, Daisuke;
Matsuda, Shunsuke;
Kurai, Satoshi;
Yao, Yongzhao;
Ishikawa, Yukari;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200871

By:

Inahara, Daisuke;
Matsuda, Shunsuke;
Matsumura, Wataru;
Okuno, Ryo;
Hanasaku, Koki;
Kowaki, Taketo;
Miyamoto, Minagi;
Yao, Yongzhao;
Ishikawa, Yukari;
Tanaka, Atsushi;
Honda, Yoshio;
Nitta, Shugo;
Amano, Hiroshi;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

Revelation of Dislocations in β‐Ga2O3 Substrates Grown by Edge‐Defined Film‐Fed Growth.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900630

By:

Yao, Yongzhao;
Ishikawa, Yukari;
Sugawara, Yoshihiro

Publication type:

Article

Revelation of Dislocations in β‐Ga2O3 Substrates Grown by Edge‐Defined Film‐Fed Growth.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900630

By:

Yao, Yongzhao;
Ishikawa, Yukari;
Sugawara, Yoshihiro

Publication type:

Article

Lattice misorientation at domain boundaries in β‐Ga2O3 single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography.

Published in:

Journal of the American Ceramic Society, 2023, v. 106, n. 9, p. 5487, doi. 10.1111/jace.19156

By:

Yao, Yongzhao;
Hirano, Keiichi;
Sasaki, Kohei;
Kuramata, Akito;
Sugawara, Yoshihiro;
Ishikawa, Yukari

Publication type:

Article

The nature of white luminescence in SiO2:C layers.

Published in:

Technical Physics Letters, 2009, v. 35, n. 6, p. 559, doi. 10.1134/S1063785009060224

By:

Vasin, A. V.;
Kushnirenko, V. I.;
Lysenko, V. S. L.;
Nazarov, A. N.;
Ishikawa, Yukari;
Salonen, J.

Publication type:

Article

Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns.

Published in:

Journal of Materials Science, 2024, v. 59, n. 7, p. 2974, doi. 10.1007/s10853-024-09392-z

By:

Ishikawa, Yukari;
Sugawara, Yoshihiro;
Yao, Yongzhao;
Miyoshi, Makoto;
Egawa, Takashi

Publication type:

Article

Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes.

Published in:

Journal of Materials Science, 2023, v. 58, n. 22, p. 9221, doi. 10.1007/s10853-023-08596-z

By:

Ishikawa, Yukari;
Sugawara, Yoshihiro;
Yokoe, Daisaku;
Sato, Koji;
Yao, Yongzhao;
Watanabe, Kenta;
Okawa, Takashi

Publication type:

Article

YOUTH SEXUALITY AND THE MODERN JAPANESE FAMILY.

Published in:

Journal of East-West Thought (JET), 2015, v. 5, n. 4, p. 25

By:

Yukari Ishikawa;
Natsuki Nagata

Publication type:

Article

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

Published in:

Microscopy, 2020, v. 69, n. 1, p. 1, doi. 10.1093/jmicro/dfz037

By:

Yamamoto, Kazuo;
Nakano, Kiyotaka;
Tanaka, Atsushi;
Honda, Yoshio;
Ando, Yuto;
Ogura, Masaya;
Matsumoto, Miko;
Anada, Satoshi;
Ishikawa, Yukari;
Amano, Hiroshi;
Hirayama, Tsukasa

Publication type:

Article

White light emission from amorphous silicon-oxycarbide materials.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 6, p. 1022, doi. 10.1002/pssa.201100816

By:

Ishikawa, Yukari;
Sato, Koji;
Kawasaki, Shinji;
Ishii, Yosuke;
Matsumura, Akihiro;
Muto, Shunsuke

Publication type:

Article

Relationship Between Propagation Angle of Dislocations in β-Ga2O3 (001) Bulk Wafers and Their Etch Pit Shapes.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5093, doi. 10.1007/s11664-023-10363-4

By:

Isaji, Sou;
Maeda, Issei;
Ogawa, Naoya;
Kosaka, Ryo;
Hasuike, Noriyuki;
Isshiki, Toshiyuki;
Kobayashi, Kenji;
Yao, Yongzhao;
Ishikawa, Yukari

Publication type:

Article

Three-Dimensional Observation of Internal Defects in a β-Ga2O3 (001) Wafer Using the FIB–SEM Serial Sectioning Method.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5190, doi. 10.1007/s11664-020-08313-5

By:

Ogawa, Kenichi;
Ogawa, Naoya;
Kosaka, Ryo;
Isshiki, Toshiyuki;
Yao, Yongzhao;
Ishikawa, Yukari

Publication type:

Article

Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5144, doi. 10.1007/s11664-020-08016-x

By:

Yao, Yongzhao;
Sugawara, Yoshihiro;
Ishikawa, Yukari;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900589

By:

Ito, Tadatoshi;
Sakamoto, Ryota;
Isono, Tatsuya;
Yao, Yongzhao;
Ishikawa, Yukari;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900588

By:

Isono, Tatsuya;
Ito, Tadatoshi;
Sakamoto, Ryota;
Yao, Yongzhao;
Ishikawa, Yukari;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Works by Ishikawa, Yukari

Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs.

Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors.

Revelation of Dislocations in β‐Ga<sub>2</sub>O<sub>3</sub> Substrates Grown by Edge‐Defined Film‐Fed Growth.

Revelation of Dislocations in β‐Ga<sub>2</sub>O<sub>3</sub> Substrates Grown by Edge‐Defined Film‐Fed Growth.

Lattice misorientation at domain boundaries in β‐Ga<sub>2</sub>O<sub>3</sub> single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography.

The nature of white luminescence in SiO<sub>2</sub>:C layers.

Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns.

Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes.

YOUTH SEXUALITY AND THE MODERN JAPANESE FAMILY.

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

White light emission from amorphous silicon-oxycarbide materials.

Relationship Between Propagation Angle of Dislocations in β-Ga<sub>2</sub>O<sub>3</sub> (001) Bulk Wafers and Their Etch Pit Shapes.

Three-Dimensional Observation of Internal Defects in a β-Ga2O3 (001) Wafer Using the FIB–SEM Serial Sectioning Method.

Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale.

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor.

Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates.