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Relationship Between Propagation Angle of Dislocations in β-Ga<sub>2</sub>O<sub>3</sub> (001) Bulk Wafers and Their Etch Pit Shapes.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5093, doi. 10.1007/s11664-023-10363-4
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- Article
Three-Dimensional Observation of Internal Defects in a β-Ga2O3 (001) Wafer Using the FIB–SEM Serial Sectioning Method.
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- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5190, doi. 10.1007/s11664-020-08313-5
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- Article
Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale.
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- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5144, doi. 10.1007/s11664-020-08016-x
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- Article
YOUTH SEXUALITY AND THE MODERN JAPANESE FAMILY.
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- Journal of East-West Thought (JET), 2015, v. 5, n. 4, p. 25
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- Article
The nature of white luminescence in SiO<sub>2</sub>:C layers.
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- Technical Physics Letters, 2009, v. 35, n. 6, p. 559, doi. 10.1134/S1063785009060224
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- Article
Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns.
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- Journal of Materials Science, 2024, v. 59, n. 7, p. 2974, doi. 10.1007/s10853-024-09392-z
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- Article
Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes.
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- Journal of Materials Science, 2023, v. 58, n. 22, p. 9221, doi. 10.1007/s10853-023-08596-z
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- Article
Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900589
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- Article
Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900588
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- Article
Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200872
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- Article
Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200871
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- Article
Revelation of Dislocations in β‐Ga<sub>2</sub>O<sub>3</sub> Substrates Grown by Edge‐Defined Film‐Fed Growth.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900630
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- Article
Revelation of Dislocations in β‐Ga<sub>2</sub>O<sub>3</sub> Substrates Grown by Edge‐Defined Film‐Fed Growth.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900630
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- Article
White light emission from amorphous silicon-oxycarbide materials.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 6, p. 1022, doi. 10.1002/pssa.201100816
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- Article
Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.
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- Microscopy, 2020, v. 69, n. 1, p. 1, doi. 10.1093/jmicro/dfz037
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- Article
Lattice misorientation at domain boundaries in β‐Ga<sub>2</sub>O<sub>3</sub> single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography.
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- Journal of the American Ceramic Society, 2023, v. 106, n. 9, p. 5487, doi. 10.1111/jace.19156
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- Article