Works matching AU Ishida, Hidetoshi


Results: 16
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    RECENT PROGRESS ON GaN-BASED ELECTRON DEVICES.

    Published in:
    International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 469, doi. 10.1142/S0129156406003795
    By:
    • Uemoto, Yasuhiro;
    • Hirose, Yutaka;
    • Murata, Tomohiro;
    • Ishida, Hidetoshi;
    • Hikita, Masahiro;
    • Yanagihara, Manabu;
    • Inoue, Kaoru;
    • Tanaka, Tsuyoshi;
    • Ueda, Daisuke;
    • Egawa, Takashi
    Publication type:
    Article
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    Polarization engineering in GaN power transistors.

    Published in:
    Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1735, doi. 10.1002/pssb.200983651
    By:
    • Ueda, Tetsuzo;
    • Murata, Tomohiro;
    • Nakazawa, Satoshi;
    • Ishida, Hidetoshi;
    • Uemoto, Yasuhiro;
    • Inoue, Kaoru;
    • Tanaka, Tsuyoshi;
    • Ueda, Daisuke
    Publication type:
    Article
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