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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2024, v. 261, n. 5, p. 1, doi. 10.1002/pssb.202400060
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- Article
A straightforward method using the sign of the piezoelectric coefficient to identify the ferroelectric switching mechanism.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-34923-0
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- Article
Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2022, v. 259, n. 10, p. 1, doi. 10.1002/pssb.202200183
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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2022, v. 259, n. 10, p. 1, doi. 10.1002/pssb.202200183
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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-00102-2
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- Article
Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-74362-9
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- Article
Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams.
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- Physica Status Solidi (B), 2019, v. 256, n. 10, p. N.PAG, doi. 10.1002/pssb.201900104
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- Article
Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams.
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- Physica Status Solidi (B), 2018, v. 255, n. 4, p. 1, doi. 10.1002/pssb.201700521
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- Article
Proton tautomerism for strong polarization switching.
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- Nature Communications, 2017, v. 8, n. 2, p. 14426, doi. 10.1038/ncomms14426
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- Article
Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam.
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- Physica Status Solidi (B), 2015, v. 252, n. 12, p. 2794, doi. 10.1002/pssb.201552345
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- Article
Structure-Property Relationship of Supramolecular Ferroelectric [H-66dmbp][Hca] Accompanied by High Polarization, Competing Structural Phases, and Polymorphs.
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- Chemistry - A European Journal, 2014, v. 20, n. 52, p. 17515, doi. 10.1002/chem.201404759
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Electronic Structure of Cu(tmdt)<sub>2</sub> Studied with First-Principles Calculations.
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- Crystals (2073-4352), 2012, v. 2, n. 3, p. 1210, doi. 10.3390/cryst2031210
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First-principles calculations of spontaneous polarization for TTF-QBrCl<sub>3</sub>.
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- Physica Status Solidi (B), 2012, v. 249, n. 5, p. 1008, doi. 10.1002/pssb.201100720
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- Article