Works by Indutnyy, I. Z.

Results: 8

Phase separation in SiO x films annealed under enhanced hydrostatic pressure.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 12, p. 2756, doi. 10.1002/pssb.200844049

By:

Rudko, G. Yu.;
Maidanchuk, I. Yu.;
Indutnyy, I. Z.;
Misiuk, A.;
Gule, E. G.;
Shepeliavyi, P. E.

Publication type:

Article

Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1248, doi. 10.1134/S1063782607100223

By:

Indutnyy, I. Z.;
Maǐdanchuk, I. Yu.;
Min'ko, V. I.;
Shepelyavyǐ, P. E.;
Dan'ko, V. A.

Publication type:

Article

Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 127

By:

Lisovskyy, I. P.;
Litovchenko, V. G.;
Zlobin, S. O.;
Voitovych, M. V.;
Khatsevich, I. M.;
Indutnyy, I. Z.;
Shepeliavyi, P. E.;
Kolomys, O. F.

Publication type:

Article

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 1, p. 40, doi. 10.15407/spqeo10.01.040

By:

Min'ko, V. I.;
Shepeliavyi, P. E.;
Indutnyy, I. Z.;
Litvin, O. S.

Publication type:

Article

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 9, doi. 10.15407/spqeo9.01.009

By:

Indutnyy, I. Z.;
Lysenko, V. S.;
Maidanchuk, I. Yu.;
Min’ko, V. I.;
Nazarov, A. N.;
Tkachenko, A. S.;
Shepeliavyi, P. E.;
Dan’ko, V. A.

Publication type:

Article

Paramagnetic defects related to photoluminescence in SiOx films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 400

By:

Rudko, G. Yu.;
Vorona, I. P.;
Indutnyy, I. Z.;
Ishchenko, S. S.;
Shepeliavyi, P. E.;
Yukhymchuk, V. O.

Publication type:

Article

Recording of high efficiency diffraction gratings by He-Ne laser.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 88

By:

Minko, V. I.;
Shepeliavyi, P. E.;
Danko, V. A.;
Romanenko, P. F.;
Litvin, O. S.;
Indutnyy, I. Z.

Publication type:

Article

Gradient Light-Absorbing SiO[sub x]/Me Coatings for Display Panels.

Published in:

Technical Physics, 2002, v. 47, n. 6, p. 720, doi. 10.1134/1.1486195

By:

Indutnyy, I. Z.;
Shepeliavyi, P. E.;
Michailovskaya, E. V.;
Park, C. W.;
Lee, J. B.;
Do, Y. R.

Publication type:

Article

Works by Indutnyy, I. Z.

Phase separation in SiO <sub>x</sub> films annealed under enhanced hydrostatic pressure.

Effect of chemical treatment on photoluminescence spectra of SiO<sub> x </sub> layers with built-in Si nanocrystals.

Effect of low-temperature annealing on light-emitting properties of na-Si/SiO<sub>x</sub> porous nanocomposite films.

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist.

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO<sub>x</sub> films.

Paramagnetic defects related to photoluminescence in SiO<sub>x</sub> films.

Recording of high efficiency diffraction gratings by He-Ne laser.

Gradient Light-Absorbing SiO[sub x]/Me Coatings for Display Panels.