Works by Indutnyi, I. Z.

Results: 23

Correction to: Polarization Transformation of Electromagnetic Radiation Upon Excitation of Surface Plasmon-Polaritons on a Metallic Grating.
Published in:
2020
By:
- Indutnyi, I. Z.;
- Mynko, V. I.;
- Sopinskyy, M. V.;
- Svezhentsova, K. V.
Publication type:
Correction Notice
Polarization Transformation of Electromagnetic Radiation Upon Excitation of Surface Plasmon-Polaritons on a Metallic Grating.
Published in:
Journal of Applied Spectroscopy, 2020, v. 86, n. 6, p. 1058, doi. 10.1007/s10812-020-00940-4
By:
- Indutnyi, I. Z.;
- Mynko, V. I.;
- Sopinskyy, M. V.;
- Svezhentsova, K. V.
Publication type:
Article
Profiling of Holographic Diffraction Gratings by Using Silver–Arsenic Triselenide Interaction.
Published in:
Technical Physics, 2001, v. 46, n. 2, p. 202, doi. 10.1134/1.1349277
By:
- Sopinskiı, N. V.;
- Romanenko, P. F.;
- Indutnyı, I. Z.
Publication type:
Article
Characteristics of phase transitions in inhomogeneous silicon monoxide/chromium thin films exposed to pulsed laser irradiation.
Published in:
Technical Physics Letters, 1999, v. 25, n. 2, p. 131, doi. 10.1134/1.1262376
By:
- Shepelyavyı, P. E.;
- Kunets, V. P.;
- Mikhaılovskaya, E. V.;
- Indutnyı, I. Z.
Publication type:
Article
Plasmon-Stimulated Photodoping in the Thin-Layer As2S3–Ag Structure.
Published in:
Optics & Spectroscopy, 2019, v. 127, n. 5, p. 938, doi. 10.1134/S0030400X19110109
By:
- Indutnyi, I. Z.;
- Mynko, V. I.;
- Sopinskyy, N. V.;
- Lytvyn, P. M.
Publication type:
Article
Plasmon enhancement of photosensitivity of Ag–chalcogenide glass thin film structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 4, p. 432, doi. 10.15407/spqeo26.04.432
By:
- Indutnyi, I. Z.;
- Mamykin, S. V.;
- Mynko, V. I.;
- Sopinskyy, M. V.;
- Korchovyi, A. A.
Publication type:
Article
Luminescent and Raman study of nanostructures formed upon annealing of SiOx:Sm films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 68, doi. 10.15407/spqeo26.01.068
By:
- Michailovska, K. V.;
- Indutnyi, I. Z.;
- Shepeliavyi, P. E.;
- Sopinskyy, M. V.;
- Dan’ko, V. A.;
- Yukhymchuk, V. O.
Publication type:
Article
The effect of surface plasmon-polaritons on the photostimulated diffusion in light-sensitive Ag-As4Ge30S66 structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 436, doi. 10.15407/spqeo24.04.436
By:
- Indutnyi, I. Z.;
- Mynko, V. I.;
- Sopinskyy, M. V.;
- Dan'ko, V. A.;
- Lytvyn, P. M.
Publication type:
Article
Formation of laterally ordered arrays of noble metal nanocavities for SERS substrates by using interference photolithography.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 1, p. 48, doi. 10.15407/spqeo24.01.048
By:
- Dan'ko, V. A.;
- Indutnyi, I. Z.;
- Mynko, V. I.;
- Lytvyn, P. M.;
- Lukaniuk, M. V.;
- Bandarenka, H. V.;
- Dolgyi, A. L.;
- Redko, S. V.
Publication type:
Article
Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 353, doi. 10.15407/spqeo22.03.353
By:
- Dan'ko, V. A.;
- Indutnyi, I. Z.;
- Myn'ko, V. I.;
- Mamykin, S. V.;
- Shepeliavyi, P. Ye.;
- Lukaniuk, M. V.;
- Lytvyn, P. M.
Publication type:
Article
Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 215, doi. 10.15407/spqeo22.02.215
By:
- Hreshchuk, O. M.;
- Yukhymchuk, V. O.;
- Dzhagan, V. M.;
- Danko, V. A.;
- Min’ko, V. I.;
- Indutnyi, I. Z.;
- Shepeliavyi, P. E.;
- Lytvyn, P. M.;
- Sheregii, E.;
- Prokhorenko, S.;
- Polit, J.;
- Zak, D.;
- Płoch, D.;
- Valakh, M. Ya.
Publication type:
Article
Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 152, doi. 10.15407/spqeo21.02.152
By:
- Lytvyn, P. M.;
- Malyuta, S. V.;
- Indutnyi, I. Z.;
- Efremov, A. A.;
- Slobodyan, O. V.;
- Min'ko, V. I.;
- Nazarov, A. N.;
- Borysov, O. V.;
- Prokopenko, I. V.
Publication type:
Article
Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 362, doi. 10.15407/spqeo20.03.362
By:
- Indutnyi, I. Z.;
- Ushenin, Yu. V.;
- Hegemann, D.;
- Vandenbossche, M.;
- Myn'ko, V. I.;
- Shepeliavyi, P. E.;
- Lukaniuk, M. V.;
- Lytvyn, P. M.;
- Khrystosenko, R. V.
Publication type:
Article
Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 438, doi. 10.15407/spqeo18.04.438
By:
- Dan'ko, V. A.;
- Dorozinsky, G. V.;
- Indutnyi, I. Z.;
- Myn'ko, V. I.;
- Ushenin, Yu. V.;
- Shepeliavyi, P. E.;
- Lukaniuk, M. V.;
- Korchovyi, A. A.;
- Khrystosenko, R. V.
Publication type:
Article
Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 324, doi. 10.15407/spqeo18.03.324
By:
- Michailovska, K. V.;
- Indutnyi, I. Z.;
- Kudryavtsev, O. O.;
- Sopinskyy, M. V.;
- Shepeliavyi, P. E.
Publication type:
Article
Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 336
By:
- Michailovska, K. V.;
- Indutnyi, I. Z.;
- Shepeliavyi, P. E.;
- Dan'ko, V. A.
Publication type:
Article
Photostimulated etching of germanium chalcogenide films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 345
By:
- Dan'ko, V. A.;
- Indutnyi, I. Z.;
- Myn'ko, V. I.;
- Shepeliavyi, P. E.;
- Lukyanyuk, M. V.;
- Litvin, O. S.
Publication type:
Article
Polarization conversion effect in obliquely deposited SiOx films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 273
By:
- Sopinskyy, M. V.;
- Indutnyi, I. Z.;
- Michailovska, K. V.;
- Shepeliavyi, P. E.;
- Tkach, V. M.
Publication type:
Article
Controlling the photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 413, doi. 10.15407/spqeo13.04.413
By:
- Dan'ko, V. A.;
- Bratus', V. Ya.;
- Indutnyi, I. Z.;
- Lisovskyy, I. P.;
- Zlobin, S. O.;
- Michailovska, K. V.;
- Shepeliavyi, P. E.
Publication type:
Article
Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiOx nanostructures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 2, p. 105
By:
- Indutnyi, I. Z.;
- Michailovska, K. V.;
- Min'ko, V. I.;
- Shepeliavyi, P. E.
Publication type:
Article
Visible photoluminescence of selectively etched porous nc-Si-Siox structures.
Published in:
Semiconductors, 2010, v. 44, n. 2, p. 206, doi. 10.1134/S1063782610020120
By:
- Indutnyi, I. Z.;
- Michailovska, E. V.;
- Shepeliavyi, P. E.;
- Dan'ko, V. A.
Publication type:
Article
Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1197, doi. 10.1134/1.2085270
By:
- Dan'ko, V. A.;
- Indutnyı, I. Z.;
- Lysenko, V. S.;
- Maıdanchuk, I. Yu.;
- Min'ko, V. I.;
- Nazarov, A. N.;
- Tkachenko, A. S.;
- Shepelyavyı, P. E.
Publication type:
Article
Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.
Published in:
Semiconductors, 2001, v. 35, n. 7, p. 821
By:
- Bratus’, V. Ya.;
- Yukhimchuk, V. A.;
- Berezhinsky, L. I.;
- Valakh, M. Ya.;
- Vorona, I. P.;
- Indutnyi, I. Z.;
- Petrenko, T. T.;
- Shepeliavyı, P. E.;
- Yanchuk, I. B.
Publication type:
Article

Works by Indutnyi, I. Z.

Correction to: Polarization Transformation of Electromagnetic Radiation Upon Excitation of Surface Plasmon-Polaritons on a Metallic Grating.

Polarization Transformation of Electromagnetic Radiation Upon Excitation of Surface Plasmon-Polaritons on a Metallic Grating.

Profiling of Holographic Diffraction Gratings by Using Silver–Arsenic Triselenide Interaction.

Characteristics of phase transitions in inhomogeneous silicon monoxide/chromium thin films exposed to pulsed laser irradiation.

Plasmon-Stimulated Photodoping in the Thin-Layer As2S3–Ag Structure.

Plasmon enhancement of photosensitivity of Ag–chalcogenide glass thin film structures.

Luminescent and Raman study of nanostructures formed upon annealing of SiO<sub>x</sub>:Sm films.

The effect of surface plasmon-polaritons on the photostimulated diffusion in light-sensitive Ag-As<sub>4</sub>Ge<sub>30</sub>S<sub>66</sub> structures.

Formation of laterally ordered arrays of noble metal nanocavities for SERS substrates by using interference photolithography.

Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation.

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.

Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist.

Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms.

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.

Nickel-induced enhancement of photoluminescence in nc-Si-SiO<sub>x</sub> nanostructures.

Photostimulated etching of germanium chalcogenide films.

Polarization conversion effect in obliquely deposited SiO<sub>x</sub> films.

Controlling the photoluminescence spectra of porous nc-Si-SiO<sub>x</sub> structures by vapor treatment.

Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiO<sub>x</sub> nanostructures.

Visible photoluminescence of selectively etched porous nc-Si-Sio<sub>x</sub> structures.

Kinetics of Structural and Phase Transformations in Thin SiO<sub>x</sub> Films in the Course of a Rapid Thermal Annealing.

Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.