Works matching AU Indutnyi, I. Z.

Results: 24

Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.

Published in:

Semiconductors, 2001, v. 35, n. 7, p. 821

By:

Bratus’, V. Ya.;
Yukhimchuk, V. A.;
Berezhinsky, L. I.;
Valakh, M. Ya.;
Vorona, I. P.;
Indutnyi, I. Z.;
Petrenko, T. T.;
Shepeliavyı, P. E.;
Yanchuk, I. B.

Publication type:

Article

Visible photoluminescence of selectively etched porous nc-Si-Siox structures.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 206, doi. 10.1134/S1063782610020120

By:

Indutnyi, I. Z.;
Michailovska, E. V.;
Shepeliavyi, P. E.;
Dan'ko, V. A.

Publication type:

Article

Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1197, doi. 10.1134/1.2085270

By:

Dan'ko, V. A.;
Indutnyı, I. Z.;
Lysenko, V. S.;
Maıdanchuk, I. Yu.;
Min'ko, V. I.;
Nazarov, A. N.;
Tkachenko, A. S.;
Shepelyavyı, P. E.

Publication type:

Article

Correction to: Polarization Transformation of Electromagnetic Radiation Upon Excitation of Surface Plasmon-Polaritons on a Metallic Grating.

Published in:

2020

By:

Indutnyi, I. Z.;
Mynko, V. I.;
Sopinskyy, M. V.;
Svezhentsova, K. V.

Publication type:

Correction Notice

Polarization Transformation of Electromagnetic Radiation Upon Excitation of Surface Plasmon-Polaritons on a Metallic Grating.

Published in:

Journal of Applied Spectroscopy, 2020, v. 86, n. 6, p. 1058, doi. 10.1007/s10812-020-00940-4

By:

Indutnyi, I. Z.;
Mynko, V. I.;
Sopinskyy, M. V.;
Svezhentsova, K. V.

Publication type:

Article

Dust-insensitive smoke detector based on plasmon-polariton photodetector.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 4, p. 466, doi. 10.15407/spqeo27.04.466

By:

Mamykin, S. V.;
Romanyuk, V. R.;
Mynko, V. I.;
Indutnyi, I. Z.;
Redko, R. A.;
Dusheyko, M. G.;
Mamontova, I. B.;
Lyaschuk, Yu. M.;
Savchuk, Ye. M.;
Shtykalо, O. V.;
Tochkovyi, V. O.;
Semikina, T. V.;
Kuznetsova, D. A.

Publication type:

Article

Plasmon enhancement of photosensitivity of Ag–chalcogenide glass thin film structures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 4, p. 432, doi. 10.15407/spqeo26.04.432

By:

Indutnyi, I. Z.;
Mamykin, S. V.;
Mynko, V. I.;
Sopinskyy, M. V.;
Korchovyi, A. A.

Publication type:

Article

Luminescent and Raman study of nanostructures formed upon annealing of SiOx:Sm films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 68, doi. 10.15407/spqeo26.01.068

By:

Michailovska, K. V.;
Indutnyi, I. Z.;
Shepeliavyi, P. E.;
Sopinskyy, M. V.;
Dan’ko, V. A.;
Yukhymchuk, V. O.

Publication type:

Article

The effect of surface plasmon-polaritons on the photostimulated diffusion in light-sensitive Ag-As4Ge30S66 structures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 436, doi. 10.15407/spqeo24.04.436

By:

Indutnyi, I. Z.;
Mynko, V. I.;
Sopinskyy, M. V.;
Dan'ko, V. A.;
Lytvyn, P. M.

Publication type:

Article

Formation of laterally ordered arrays of noble metal nanocavities for SERS substrates by using interference photolithography.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 1, p. 48, doi. 10.15407/spqeo24.01.048

By:

Dan'ko, V. A.;
Indutnyi, I. Z.;
Mynko, V. I.;
Lytvyn, P. M.;
Lukaniuk, M. V.;
Bandarenka, H. V.;
Dolgyi, A. L.;
Redko, S. V.

Publication type:

Article

Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 353, doi. 10.15407/spqeo22.03.353

By:

Dan'ko, V. A.;
Indutnyi, I. Z.;
Myn'ko, V. I.;
Mamykin, S. V.;
Shepeliavyi, P. Ye.;
Lukaniuk, M. V.;
Lytvyn, P. M.

Publication type:

Article

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 215, doi. 10.15407/spqeo22.02.215

By:

Hreshchuk, O. M.;
Yukhymchuk, V. O.;
Dzhagan, V. M.;
Danko, V. A.;
Min’ko, V. I.;
Indutnyi, I. Z.;
Shepeliavyi, P. E.;
Lytvyn, P. M.;
Sheregii, E.;
Prokhorenko, S.;
Polit, J.;
Zak, D.;
Płoch, D.;
Valakh, M. Ya.

Publication type:

Article

Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 152, doi. 10.15407/spqeo21.02.152

By:

Lytvyn, P. M.;
Malyuta, S. V.;
Indutnyi, I. Z.;
Efremov, A. A.;
Slobodyan, O. V.;
Min'ko, V. I.;
Nazarov, A. N.;
Borysov, O. V.;
Prokopenko, I. V.

Publication type:

Article

Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 362, doi. 10.15407/spqeo20.03.362

By:

Indutnyi, I. Z.;
Ushenin, Yu. V.;
Hegemann, D.;
Vandenbossche, M.;
Myn'ko, V. I.;
Shepeliavyi, P. E.;
Lukaniuk, M. V.;
Lytvyn, P. M.;
Khrystosenko, R. V.

Publication type:

Article

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 438, doi. 10.15407/spqeo18.04.438

By:

Dan'ko, V. A.;
Dorozinsky, G. V.;
Indutnyi, I. Z.;
Myn'ko, V. I.;
Ushenin, Yu. V.;
Shepeliavyi, P. E.;
Lukaniuk, M. V.;
Korchovyi, A. A.;
Khrystosenko, R. V.

Publication type:

Article

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 324, doi. 10.15407/spqeo18.03.324

By:

Michailovska, K. V.;
Indutnyi, I. Z.;
Kudryavtsev, O. O.;
Sopinskyy, M. V.;
Shepeliavyi, P. E.

Publication type:

Article

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 336

By:

Michailovska, K. V.;
Indutnyi, I. Z.;
Shepeliavyi, P. E.;
Dan'ko, V. A.

Publication type:

Article

Photostimulated etching of germanium chalcogenide films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 345

By:

Dan'ko, V. A.;
Indutnyi, I. Z.;
Myn'ko, V. I.;
Shepeliavyi, P. E.;
Lukyanyuk, M. V.;
Litvin, O. S.

Publication type:

Article

Polarization conversion effect in obliquely deposited SiOx films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 273

By:

Sopinskyy, M. V.;
Indutnyi, I. Z.;
Michailovska, K. V.;
Shepeliavyi, P. E.;
Tkach, V. M.

Publication type:

Article

Controlling the photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 413, doi. 10.15407/spqeo13.04.413

By:

Dan'ko, V. A.;
Bratus', V. Ya.;
Indutnyi, I. Z.;
Lisovskyy, I. P.;
Zlobin, S. O.;
Michailovska, K. V.;
Shepeliavyi, P. E.

Publication type:

Article

Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiOx nanostructures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 2, p. 105

By:

Indutnyi, I. Z.;
Michailovska, K. V.;
Min'ko, V. I.;
Shepeliavyi, P. E.

Publication type:

Article

Plasmon-Stimulated Photodoping in the Thin-Layer As2S3–Ag Structure.

Published in:

Optics & Spectroscopy, 2019, v. 127, n. 5, p. 938, doi. 10.1134/S0030400X19110109

By:

Indutnyi, I. Z.;
Mynko, V. I.;
Sopinskyy, N. V.;
Lytvyn, P. M.

Publication type:

Article

Profiling of Holographic Diffraction Gratings by Using Silver–Arsenic Triselenide Interaction.

Published in:

Technical Physics, 2001, v. 46, n. 2, p. 202, doi. 10.1134/1.1349277

By:

Sopinskiı, N. V.;
Romanenko, P. F.;
Indutnyı, I. Z.

Publication type:

Article

Characteristics of phase transitions in inhomogeneous silicon monoxide/chromium thin films exposed to pulsed laser irradiation.

Published in:

Technical Physics Letters, 1999, v. 25, n. 2, p. 131, doi. 10.1134/1.1262376

By:

Shepelyavyı, P. E.;
Kunets, V. P.;
Mikhaılovskaya, E. V.;
Indutnyı, I. Z.

Publication type:

Article

Works matching AU Indutnyi, I. Z.

Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.

Visible photoluminescence of selectively etched porous nc-Si-Sio<sub>x</sub> structures.

Kinetics of Structural and Phase Transformations in Thin SiO<sub>x</sub> Films in the Course of a Rapid Thermal Annealing.

Correction to: Polarization Transformation of Electromagnetic Radiation Upon Excitation of Surface Plasmon-Polaritons on a Metallic Grating.

Polarization Transformation of Electromagnetic Radiation Upon Excitation of Surface Plasmon-Polaritons on a Metallic Grating.

Dust-insensitive smoke detector based on plasmon-polariton photodetector.

Plasmon enhancement of photosensitivity of Ag–chalcogenide glass thin film structures.

Luminescent and Raman study of nanostructures formed upon annealing of SiO<sub>x</sub>:Sm films.

The effect of surface plasmon-polaritons on the photostimulated diffusion in light-sensitive Ag-As<sub>4</sub>Ge<sub>30</sub>S<sub>66</sub> structures.

Formation of laterally ordered arrays of noble metal nanocavities for SERS substrates by using interference photolithography.

Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation.

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.

Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist.

Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms.

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.

Nickel-induced enhancement of photoluminescence in nc-Si-SiO<sub>x</sub> nanostructures.

Photostimulated etching of germanium chalcogenide films.

Polarization conversion effect in obliquely deposited SiO<sub>x</sub> films.

Controlling the photoluminescence spectra of porous nc-Si-SiO<sub>x</sub> structures by vapor treatment.

Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiO<sub>x</sub> nanostructures.

Plasmon-Stimulated Photodoping in the Thin-Layer As2S3–Ag Structure.

Profiling of Holographic Diffraction Gratings by Using Silver–Arsenic Triselenide Interaction.

Characteristics of phase transitions in inhomogeneous silicon monoxide/chromium thin films exposed to pulsed laser irradiation.