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Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission.
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- Journal of Applied Spectroscopy, 2008, v. 75, n. 6, p. 805, doi. 10.1007/s10812-009-9128-8
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- Article
Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature.
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- Technical Physics Letters, 2009, v. 35, n. 9, p. 857, doi. 10.1134/S1063785009090211
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- Article
Photodiodes based on n-GaSb/ n-GaInAsSb/ p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range.
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- Technical Physics Letters, 2009, v. 35, n. 1, p. 67, doi. 10.1134/S1063785009010209
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- Article
Ultrafast frequency tuning in diode lasers based on InAsSb/InAsSbP heterostructures operating in the 3–4 μm spectral range.
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- Technical Physics Letters, 2008, v. 34, n. 10, p. 881, doi. 10.1134/S1063785008100210
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- Article
Impact-ionization-stimulated electroluminescence in isotype n-GaSb/ n-AlGaAsSb/ n-GaInAsSb heterostructures.
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- Technical Physics Letters, 2007, v. 33, n. 12, p. 987, doi. 10.1134/S1063785007120012
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- Article
Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range.
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- Technical Physics Letters, 2007, v. 33, n. 10, p. 809, doi. 10.1134/S1063785007100021
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- Article
High-Efficiency LEDs Based on GaInAsSb Solid Solutions with Reduced Arsenic Content in the Active Region.
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- Technical Physics Letters, 2005, v. 31, n. 3, p. 238, doi. 10.1134/1.1894444
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- Article
Simultaneous Interface and Interband Lasing in InAs/InAsSbP Heterostructures Grown by Metalorganic Vapor Phase Epitaxy.
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- Technical Physics Letters, 2004, v. 30, n. 12, p. 1030, doi. 10.1134/1.1846848
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- Article
Ultimate InAsSbP Solid Solutions for 2.6–2.8-μm LEDs.
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- Technical Physics Letters, 2001, v. 27, n. 7, p. 611, doi. 10.1134/1.1388961
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- Article
High-Efficiency 3.4–4.4μm Light-Emitting Diodes Based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb Heterostructure Operating at Room Temperature.
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- Technical Physics Letters, 2001, v. 27, n. 3, p. 173, doi. 10.1134/1.1359816
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- Article
InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency.
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- Technical Physics Letters, 1999, v. 25, n. 10, p. 766, doi. 10.1134/1.1262628
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- Article
AlGaAsSb lasers emitting in the 1.6 μm region.
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- Technical Physics Letters, 1999, v. 25, n. 5, p. 395, doi. 10.1134/1.1262494
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- Article
Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers.
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- Technical Physics Letters, 1998, v. 24, n. 3, p. 239, doi. 10.1134/1.1262069
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- Article
Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure.
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- Technical Physics Letters, 1997, v. 23, n. 11, p. 887, doi. 10.1134/1.1261921
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- Article
High-efficiency LEDs based on n-GaSb/ p-GaSb/ n-GaInAsSb/ P-AlGaAsSb type-II thyristor heterostructures.
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- Semiconductors, 2007, v. 41, n. 7, p. 855, doi. 10.1134/S1063782607070135
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- Article
Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4μm Mid-Infrared Spectral Range.
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- Semiconductors, 2005, v. 39, n. 11, p. 1235, doi. 10.1134/1.2128447
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- Article
Interfacial and Interband Lasing in an InAs/InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds.
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- Semiconductors, 2005, v. 39, n. 4, p. 472, doi. 10.1134/1.1900265
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- Article
Infrared Light-Emitting Diodes Based on GaInAsSb Solid Solutions Grown from Lead-Containing Solution–Melts.
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- Semiconductors, 2004, v. 38, n. 12, p. 1419, doi. 10.1134/1.1836064
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- Article
Properties of GaSb-Based Light-Emitting Diodes with Chemically Cut Substrates.
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- Semiconductors, 2003, v. 37, n. 12, p. 1414, doi. 10.1134/1.1634664
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- Article
Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range.
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- Semiconductors, 2003, v. 37, n. 4, p. 485, doi. 10.1134/1.1568474
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- Article
Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux.
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- Semiconductors, 2002, v. 36, n. 11, p. 1303, doi. 10.1134/1.1521235
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- Article
Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature.
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- Semiconductors, 2002, v. 36, n. 5, p. 592, doi. 10.1134/1.1478554
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- Article
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3–4 μm Spectral Range.
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- Semiconductors, 2001, v. 35, n. 12, p. 1404, doi. 10.1134/1.1427979
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- Article
Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3μm.
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- Semiconductors, 2001, v. 35, n. 3, p. 360, doi. 10.1134/1.1356163
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- Article
Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers.
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- Semiconductors, 2000, v. 34, n. 12, p. 1406, doi. 10.1134/1.1331800
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- Article
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3–4μm: Part I.
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- Semiconductors, 2000, v. 34, n. 11, p. 1343, doi. 10.1134/1.1325437
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- Article
Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p–n-Junction Plane.
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- Semiconductors, 2000, v. 34, n. 9, p. 1100, doi. 10.1134/1.1309431
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- Article
Single-Mode InAsSb/InAsSbP Laser (λapprox. 3.2μm) Tunable over 100 Å.
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- Semiconductors, 2000, v. 34, n. 2, p. 237, doi. 10.1134/1.1187939
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- Article
Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm.
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- Semiconductors, 1999, v. 33, n. 12, p. 1322, doi. 10.1134/1.1187918
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- Article
Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity.
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- Semiconductors, 1999, v. 33, n. 9, p. 991, doi. 10.1134/1.1187821
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- Article
Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions.
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- Semiconductors, 1999, v. 33, n. 8, p. 924, doi. 10.1134/1.1187630
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- Article
Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions.
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- Semiconductors, 1999, v. 33, n. 3, p. 350, doi. 10.1134/1.1187693
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- Article
Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 μm) due to nonlinear optical effects.
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- Semiconductors, 1999, v. 33, n. 2, p. 210, doi. 10.1134/1.1187672
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- Article
High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range.
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- Semiconductors, 1999, v. 33, n. 2, p. 206, doi. 10.1134/1.1187671
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- Article
Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current.
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- Semiconductors, 1998, v. 32, n. 3, p. 339, doi. 10.1134/1.1187393
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- Article
InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 μm(T=77 K).
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- Semiconductors, 1998, v. 32, n. 2, p. 218, doi. 10.1134/1.1187345
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- Article
Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm.
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- Semiconductors, 1997, v. 31, n. 11, p. 1200, doi. 10.1134/1.1187294
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- Article
Influence of charge carriers on tuning in InAsSb lasers.
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- Semiconductors, 1997, v. 31, n. 6, p. 563, doi. 10.1134/1.1187215
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- Article
Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures.
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- Technical Physics Letters, 2010, v. 36, n. 7, p. 626, doi. 10.1134/S1063785010070126
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- Article
Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure.
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- Technical Physics Letters, 2010, v. 36, n. 4, p. 351, doi. 10.1134/S1063785010040188
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- Article
LEDs (λ<sub>max</sub> = 3.6 μm) with cone-shaped light-emitting surfaces.
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- Technical Physics Letters, 2010, v. 36, n. 2, p. 144, doi. 10.1134/S106378501002015X
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- Article
Visual observation of frequency tuning in whispering gallery mode diode laser at room temperature.
- Published in:
- Technical Physics Letters, 2009, v. 35, n. 12, p. 1149, doi. 10.1134/S1063785009120220
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- Article
Ray interference in tunable whispering gallery mode semiconductor laser.
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- Technical Physics Letters, 2009, v. 35, n. 12, p. 1129, doi. 10.1134/S1063785009120177
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- Article