Found: 20
Select item for more details and to access through your institution.
Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 24, p. 3159, doi. 10.3390/nano13243159
- By:
- Publication type:
- Article
Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 14, p. 2132, doi. 10.3390/nano13142132
- By:
- Publication type:
- Article
Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 10, p. 1629, doi. 10.3390/nano13101629
- By:
- Publication type:
- Article
Viscosity-Controllable Graphene Oxide Colloids Using Electrophoretically Deposited Graphene Oxide Sheets.
- Published in:
- Micromachines, 2022, v. 13, n. 12, p. 2157, doi. 10.3390/mi13122157
- By:
- Publication type:
- Article
Low-Frequency Noise Characteristics in HfO 2 -Based Metal-Ferroelectric-Metal Capacitors.
- Published in:
- Materials (1996-1944), 2022, v. 15, n. 21, p. 7475, doi. 10.3390/ma15217475
- By:
- Publication type:
- Article
High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 7, p. 643, doi. 10.3390/nano12040643
- By:
- Publication type:
- Article
High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 4, p. 643, doi. 10.3390/nano12040643
- By:
- Publication type:
- Article
Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer.
- Published in:
- Crystals (2073-4352), 2021, v. 11, n. 5, p. 489, doi. 10.3390/cryst11050489
- By:
- Publication type:
- Article
Growth of High Quality GaN on Si (111) Substrate by Using Two-Step Growth Method for Vertical Power Devices Application.
- Published in:
- Crystals (2073-4352), 2021, v. 11, n. 3, p. 234, doi. 10.3390/cryst11030234
- By:
- Publication type:
- Article
Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al 2 O 3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes.
- Published in:
- Crystals (2073-4352), 2021, v. 11, n. 2, p. 87, doi. 10.3390/cryst11020087
- By:
- Publication type:
- Article
Influence of Thermal Annealing on the PdAl/Au Metal Stack Ohmic Contacts to p-AlGaN.
- Published in:
- Crystals (2073-4352), 2020, v. 10, n. 12, p. 1091, doi. 10.3390/cryst10121091
- By:
- Publication type:
- Article
Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions.
- Published in:
- Crystals (2073-4352), 2020, v. 10, n. 9, p. 830, doi. 10.3390/cryst10090830
- By:
- Publication type:
- Article
Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs.
- Published in:
- Crystals (2073-4352), 2020, v. 10, n. 9, p. 848, doi. 10.3390/cryst10090848
- By:
- Publication type:
- Article
Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs.
- Published in:
- Crystals (2073-4352), 2020, v. 10, n. 8, p. 717, doi. 10.3390/cryst10080717
- By:
- Publication type:
- Article
Temperature- and light-sensitive mechanism in metal/organic/n-GaN bio-hybrid temperature photodiode based on salmon DNA biomolecule.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11771, doi. 10.1007/s10854-019-01542-3
- By:
- Publication type:
- Article
Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure.
- Published in:
- Nano Research, 2019, v. 12, n. 4, p. 809, doi. 10.1007/s12274-019-2292-0
- By:
- Publication type:
- Article
Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700654
- By:
- Publication type:
- Article
Growth of 10 nm-thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance.
- Published in:
- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600731
- By:
- Publication type:
- Article
Normally‐off vertical‐type mesa‐gate GaN MOSFET.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 23, p. 1749, doi. 10.1049/el.2014.1692
- By:
- Publication type:
- Article
RECESSED-GATE NORMALLY-OFF MOSFET TECHNOLOGIES.
- Published in:
- International Journal of High Speed Electronics & Systems, 2012, v. 21, n. 1, p. -1, doi. 10.1142/S0129156412500073
- By:
- Publication type:
- Article