Found: 24
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Solar light induced antibacterial performance of TiO<sub>2</sub> crystallized glass ceramics.
- Published in:
- International Journal of Applied Glass Science, 2018, v. 9, n. 4, p. 480, doi. 10.1111/ijag.12355
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- Article
Sustainable Production of Ultrathin Ge Freestanding Membranes.
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- Sustainability (2071-1050), 2024, v. 16, n. 4, p. 1444, doi. 10.3390/su16041444
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- Publication type:
- Article
High‐Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology.
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- Solar RRL, 2024, v. 8, n. 1, p. 1, doi. 10.1002/solr.202300643
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- Publication type:
- Article
High‐Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology.
- Published in:
- Solar RRL, 2024, v. 8, n. 1, p. 1, doi. 10.1002/solr.202300643
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- Publication type:
- Article
Defect free strain relaxation of microcrystals on mesoporous patterned silicon.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-34288-4
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- Article
O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate.
- Published in:
- Nanomaterials (2079-4991), 2020, v. 10, n. 12, p. 2450, doi. 10.3390/nano10122450
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- Article
Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots.
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- Nanomaterials (2079-4991), 2019, v. 9, n. 1, p. 124, doi. 10.3390/nano9010124
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- Article
Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field.
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- Micromachines, 2019, v. 10, n. 4, p. 243, doi. 10.3390/mi10040243
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- Article
Porous Ba<sub>0.85</sub>Ca<sub>0.15</sub>Zr<sub>0.1</sub>Ti<sub>0.9</sub>O<sub>3</sub> Ceramics for Pyroelectric Applications.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4882, doi. 10.1007/s11664-018-6375-6
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- Article
Electrical and Infrared Optical Properties of Vanadium Oxide Semiconducting Thin-Film Thermometers.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 10, p. 5978, doi. 10.1007/s11664-017-5571-0
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- Publication type:
- Article
Flexoelectric Induced Caloric Effect in Truncated Pyramid Shaped BaSrTiO Ferroelectric Material.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 7, p. 4166, doi. 10.1007/s11664-017-5362-7
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- Publication type:
- Article
Design of direct band gap type I GeSn/Ge quantum dots for mid-IR light emitters on Si substrate.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 5, p. n/a, doi. 10.1002/pssr.201700047
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- Publication type:
- Article
Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.
- Published in:
- Materials (1996-1944), 2016, v. 9, n. 7, p. 511, doi. 10.3390/ma9070511
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- Publication type:
- Article
Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.
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- Materials (1996-1944), 2015, v. 8, n. 8, p. 4699, doi. 10.3390/ma8084699
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- Publication type:
- Article
Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate.
- Published in:
- Materials (1996-1944), 2015, v. 8, n. 7, p. 4544, doi. 10.3390/ma8074544
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- Publication type:
- Article
Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content.
- Published in:
- Crystals (2073-4352), 2019, v. 9, n. 10, p. 530, doi. 10.3390/cryst9100530
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- Publication type:
- Article
Ex-Situ Thermal Treatment Effects on the Temperature Dependent Carriers Dynamics in InAs/InGaAs/GaAs Quantum Dots.
- Published in:
- Crystals (2073-4352), 2018, v. 8, n. 5, p. 192, doi. 10.3390/cryst8050192
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- Publication type:
- Article
In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy.
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- Journal of Nanophotonics, 2016, v. 10, n. 3, p. 1, doi. 10.1117/1.jnp.10.033501
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- Publication type:
- Article
Large‐Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties.
- Published in:
- Advanced Materials Interfaces, 2023, v. 10, n. 14, p. 1, doi. 10.1002/admi.202202495
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- Article
Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers.
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- Physica Status Solidi (B), 2021, v. 258, n. 11, p. 1, doi. 10.1002/pssb.202100103
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- Article
Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure (Phys. Status Solidi A 9∕2015).
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- 2015
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- Publication type:
- Other
Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 1888, doi. 10.1002/pssa.201532006
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- Publication type:
- Article
Evolution of InAs/GaAs QDs Size with the Growth Rate: A Numerical Investigation.
- Published in:
- Journal of Nanomaterials, 2015, v. 2015, p. 1, doi. 10.1155/2015/847018
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- Publication type:
- Article
Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.
- Published in:
- Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2587-1
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- Publication type:
- Article