Found: 7
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HgCdTe quantum wells grown by molecular beam epitaxy.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 47
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- Article
1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films.
- Published in:
- Technical Physics Letters, 2007, v. 33, n. 6, p. 471, doi. 10.1134/S1063785007060089
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- Article
Dependence of the electrical parameters of MBE-grown Cd<sub> x </sub>Hg<sub>1 − x </sub>Te films on the level of doping with indium.
- Published in:
- Semiconductors, 2008, v. 42, n. 6, p. 648, doi. 10.1134/S1063782608060031
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- Article
Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy.
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- Semiconductors, 2008, v. 42, n. 6, p. 651, doi. 10.1134/S1063782608060043
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- Article
Mechanisms of recombination of nonequilibrium charge carriers in epitaxial Cd<sub>x</sub>Hg<sub>1− x </sub>Te ( x = 0.20–0.23) layers.
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- Semiconductors, 2007, v. 41, n. 2, p. 130, doi. 10.1134/S1063782607020029
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- Article
Spontaneous and stimulated emission from Cd<sub>x</sub>Hg<sub>1− x </sub> Te semiconductor films.
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- Semiconductors, 2006, v. 40, n. 11, p. 1266, doi. 10.1134/S1063782606110042
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- Article
Determining the Compositional Profile of HgTe/Cd<sub>x</sub>Hg<sub>1 –</sub> <sub>x</sub>Te Quantum Wells by Single-Wavelength Ellipsometry.
- Published in:
- Optics & Spectroscopy, 2019, v. 127, n. 2, p. 340, doi. 10.1134/S0030400X19080253
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- Article