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LiTaO<sub>3</sub> Single Crystal Growth by the Vertical Bridgman Technique.
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- Crystal Research & Technology, 2018, v. 53, n. 9, p. 1, doi. 10.1002/crat.201800044
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Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga-Al liquid-phase epitaxy.
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- Physica Status Solidi (B), 2015, v. 252, n. 4, p. 743, doi. 10.1002/pssb.201451426
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- Article