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A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile MemoriesOne of us (B.H.P.) was supported by the Samsung Advanced Institute of Technology through the Basic Research Program of the Korea Science and Engineering Foundation, grant No. R01-2006-000-10883-0, a Korean Research Foundation Grant (KRF-2004-005-D00046), Seoul R&BD Program, a grant from the Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by MOST, and the National Research Program for the 0.1 Terabit Nonvolatile Memory Development, sponsored by the Korea Ministry of Commerce, Industry, and Energy.
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- Advanced Materials, 2007, v. 19, n. 1, p. 73, doi. 10.1002/adma.200601025
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Pervaporation behavior of asymmetric sulfonated polysulfones and sulfonated poly(ether sulfone) membranes.
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- Journal of Applied Polymer Science, 2000, v. 76, n. 6, p. 787, doi. 10.1002/(SICI)1097-4628(20000509)76:6<787::AID-APP4>3.0.CO;2-1
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