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Enhanced Ferroelectric Properties in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films Using a HfO<sub>0.61</sub>N<sub>0.72</sub> Interfacial Layer.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 6, p. 1, doi. 10.1002/aelm.202100042
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- Article
Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al<sub>2</sub>O<sub>3</sub>/ZnO Thin Films for a Field‐Effect Transistor.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000876
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- Article
Field‐Induced Ferroelectric Hf<sub>1‐</sub><sub>x</sub>Zr<sub>x</sub>O<sub>2</sub> Thin Films for High‐k Dynamic Random Access Memory.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000631
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- Article
Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286
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- Article
2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface (Adv. Electron. Mater. 6/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286
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- Article
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors.
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- Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03301-4
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- Article
Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al<sub>2</sub>O<sub>3</sub>/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> Bilayer Thin Film.
- Published in:
- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201808228
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- Article
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800436
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- Article
Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub>.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800388
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- Article
Giant Negative Electrocaloric Effects of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Materials, 2016, v. 28, n. 36, p. 7956, doi. 10.1002/adma.201602787
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- Article