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GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al<sub>2</sub>O<sub>3</sub> AS GATE DIELECTRIC AND SURFACE PASSIVATION.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 167, doi. 10.1142/S0129156404002843
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- Article
Molecular Beam Epitaxial Growth of Cd<sub>1-y</sub>Zn<sub>y</sub>Se<sub>x</sub>Te<sub>1-x</sub> on Si(211).
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 6, p. 498, doi. 10.1007/s11664-004-0037-6
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- Publication type:
- Article