Works matching AU Hwang, Hyunsang

Results: 60

Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400881

By:

Kim, Dongmin;
Lee, Jangseop;
Seo, Yoori;
Kwon, Ohhyuk;
Masouleh, Pendar Azaripour;
Lee, Jisung;
Kwon, Joonhyun;
Kim, Chul‐Heung;
Hwang, Hyunsang

Publication type:

Article

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400764

By:

Habibi, Mostafa;
Kashir, Alireza;
Oh, Seungyeol;
Jang, Hojung;
Hwang, Hyunsang

Publication type:

Article

Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101257

By:

Lee, Seungwoo;
Kim, Seong Hun;
Oh, Seungyeol;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100219

By:

Lee, Jongwon;
Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Kwak, Hyunjeong;
Kim, Seyoung;
Hwang, Hyunsang

Publication type:

Article

All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100142

By:

Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Hwang, Hyunsang

Publication type:

Article

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag‐Based Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202100022

By:

Banerjee, Writam;
Kim, Seong Hun;
Lee, Seungwoo;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Hybrid Memory Device (Memory/Selector) with Scalable and Simple Structure for XNOR‐Based Neural Network Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000881

By:

Sung, Changhyuck;
Kim, Seong Hun;
Kwak, Myounghoon;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000869

By:

Lee, Seungwoo;
Banerjee, Writam;
Lee, Sangmin;
Sung, Changhyuck;
Hwang, Hyunsang

Publication type:

Article

Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000488

By:

Banerjee, Writam;
Hwang, Hyunsang

Publication type:

Article

Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901100

By:

Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Lee, Jongwon;
Rajput, Krishn Gopal;
Hwang, Hyunsang

Publication type:

Article

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900744

By:

Banerjee, Writam;
Hwang, Hyunsang

Publication type:

Article

Various Threshold Switching Devices for Integrate and Fire Neuron Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800866

By:

Lee, Donguk;
Kwak, Myonghoon;
Moon, Kibong;
Choi, Wooseok;
Park, Jaehyuk;
Yoo, Jongmyung;
Song, Jeonghwan;
Lim, Seokjae;
Sung, Changhyuck;
Banerjee, Writam;
Hwang, Hyunsang

Publication type:

Article

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900196

By:

Yoo, Jongmyung;
Kim, Seong Hun;
Chekol, Solomon Amsalu;
Park, Jaehyuk;
Sung, Changhyuck;
Song, Jeonghwan;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Resistive Switching Memory: Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018).

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 11, p. N.PAG, doi. 10.1002/aelm.201870052

By:

Raeis‐Hosseini, Niloufar;
Lim, Seokjae;
Hwang, Hyunsang;
Rho, Junsuk

Publication type:

Article

Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 11, p. N.PAG, doi. 10.1002/aelm.201800360

By:

Raeis‐Hosseini, Niloufar;
Lim, Seokjae;
Hwang, Hyunsang;
Rho, Junsuk

Publication type:

Article

Additional hardening in harmonic structured materials by strain partitioning and back stress.

Published in:

Materials Research Letters, 2018, v. 6, n. 5 Duplicate, p. 261, doi. 10.1080/21663831.2018.1439115

By:

Park, Hyung Keun;
Ameyama, Kei;
Yoo, Jongmyung;
Hwang, Hyunsang;
Kim, Hyoung Seop

Publication type:

Article

Additional hardening in harmonic structured materials by strain partitioning and back stress.

Published in:

Materials Research Letters, 2018, v. 6, n. 5, p. 261, doi. 10.1080/21663831.2018.1439115

By:

Park, Hyung Keun;
Ameyama, Kei;
Yoo, Jongmyung;
Hwang, Hyunsang;
Kim, Hyoung Seop

Publication type:

Article

Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters.

Published in:

Scientific Reports, 2018, v. 8, n. 1, p. 1, doi. 10.1038/s41598-018-30207-0

By:

Koo, Yunmo;
Hwang, Hyunsang

Publication type:

Article

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications.

Published in:

Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 11, p. 454, doi. 10.1002/pssr.201206382

By:

Park, Sangsu;
Jung, Seungjae;
Siddik, Manzar;
Jo, Minseok;
Park, Jubong;
Kim, Seonghyun;
Lee, Wootae;
Shin, Jungho;
Lee, Daeseok;
Choi, Godeuni;
Woo, Jiyong;
Cha, Euijun;
Lee, Byoung Hun;
Hwang, Hyunsang

Publication type:

Article

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 10/11, p. 409, doi. 10.1002/pssr.201105317

By:

Park, Sangsu;
Jung, Seungjae;
Siddik, Manzar;
Jo, Minseok;
Lee, Joonmyoung;
Park, Jubong;
Lee, Wootae;
Kim, Seonghyun;
Sadaf, Sharif Md.;
Liu, Xinjun;
Hwang, Hyunsang

Publication type:

Article

Cover Picture: Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer (Phys. Status Solidi RRL 10-11/2011).

Published in:

Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 10/11, p. n/a, doi. 10.1002/pssr.201190023

By:

Park, Sangsu;
Jung, Seungjae;
Siddik, Manzar;
Jo, Minseok;
Lee, Joonmyoung;
Park, Jubong;
Lee, Wootae;
Kim, Seonghyun;
Sadaf, Sharif Md.;
Liu, Xinjun;
Hwang, Hyunsang

Publication type:

Article

Coexistence of filamentary and homogeneous resistive switching in graded WO.

Published in:

Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 3, p. 89, doi. 10.1002/pssr.201004455

By:

Biju, Kuyyadi P.;
Liu, Xinjun;
Kim, Seonghyun;
Jung, Seungjae;
Park, Jubong;
Hwang, Hyunsang

Publication type:

Article

Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 93, n. 2, p. 409, doi. 10.1007/s00339-008-4782-x

By:

Dong, R.;
Lee, D. S.;
Pyun, M. B.;
Hasan, M.;
Choi, H. J.;
Jo, M. S.;
Seong, D. J.;
Chang, M.;
Heo, S. H.;
Lee, J. M.;
Park, H. K.;
Hyunsang Hwang

Publication type:

Article

Multinary Data Processing Based on Nonlinear Synaptic Devices.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3471, doi. 10.1007/s11664-021-08841-8

By:

Kim, Myungjun;
Lee, Jae-Eun;
Lee, Chuljun;
Song, Yubin;
Han, Geonhui;
Seo, Jongseon;
Kim, Dong-Wook;
Seo, Young-Ho;
Hwang, Hyunsang;
Lee, Daeseok

Publication type:

Article

Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3635, doi. 10.1007/s11664-014-3265-4

By:

Lee, Daeseok;
Woo, Jiyong;
Cha, Euijun;
Lee, Sangheon;
Hwang, Hyunsang

Publication type:

Article

Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase Boundary.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 8, p. 1, doi. 10.1002/pssa.202000819

By:

Kashir, Alireza;
Hwang, Hyunsang

Publication type:

Article

Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 2, p. 1, doi. 10.1002/pssa.202000534

By:

Jin, Soeun;
Lee, Donguk;
Kwak, Myonghoon;
Kim, Ah Ra;
Hwang, Hyunsang;
Cheon, Hyuknyeong;
Kwon, Jung-Dae;
Kim, Yonghun

Publication type:

Article

Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 2, p. 1, doi. 10.1002/pssa.202000534

By:

Jin, Soeun;
Lee, Donguk;
Kwak, Myonghoon;
Kim, Ah Ra;
Hwang, Hyunsang;
Cheon, Hyuknyeong;
Kwon, Jung-Dae;
Kim, Yonghun

Publication type:

Article

Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 1, p. 1, doi. 10.1002/pssa.202170012

By:

Jin, Soeun;
Lee, Donguk;
Kwak, Myonghoon;
Kim, Ah Ra;
Hwang, Hyunsang;
Cheon, Hyuknyeong;
Kwon, Jung-Dae;
Kim, Yonghun

Publication type:

Article

Neural Network Training Acceleration With RRAM-Based Hybrid Synapses.

Published in:

Frontiers in Neuroscience, 2021, v. 15, p. 1, doi. 10.3389/fnins.2021.690418

By:

Choi, Wooseok;
Kwak, Myonghoon;
Kim, Seyoung;
Hwang, Hyunsang

Publication type:

Article

Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism.

Published in:

Advanced Materials, 2017, v. 29, n. 30, p. n/a, doi. 10.1002/adma.201701752

By:

Chae, Byeong‐Gyu;
Seol, Jae‐Bok;
Song, Jeong‐Hwan;
Baek, Kyungjoon;
Oh, Sang‐Ho;
Hwang, Hyunsang;
Park, Chan‐Gyung

Publication type:

Article

Electronic system with memristive synapses for pattern recognition.

Published in:

Scientific Reports, 2015, p. 10123, doi. 10.1038/srep10123

By:

Park, Sangsu;
Noh, Jinwoo;
Hun Lee, Byoung;
Chu, Myonglae;
Lee, Byung-geun;
Kim, Jongin;
Lee, Boreom;
Jeon, Moongu;
Hwang, Hyunsang

Publication type:

Article

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS 2 FETs Using Buried-Gate Structures.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 21, p. 2870, doi. 10.3390/nano13212870

By:

Lee, Ju-Ah;
Yoon, Jongwon;
Hwang, Seungkwon;
Hwang, Hyunsang;
Kwon, Jung-Dae;
Lee, Seung-Ki;
Kim, Yonghun

Publication type:

Article

Linear Frequency Modulation of NbO2-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural Network.

Published in:

Frontiers in Neuroscience, 2022, v. 16, p. 1, doi. 10.3389/fnins.2022.939687

By:

Donguk Lee;
Myonghoon Kwak;
Jongwon Lee;
Jiyong Woo;
Hyunsang Hwang

Publication type:

Article

Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory.

Published in:

Advanced Materials, 2015, v. 27, n. 1, p. 59, doi. 10.1002/adma.201403675

By:

Lee, Daeseok;
Park, Jaesung;
Park, Jaehyuk;
Woo, Jiyong;
Cha, Euijun;
Lee, Sangheon;
Moon, Kibong;
Song, Jeonghwan;
Koo, Yunmo;
Hwang, Hyunsang

Publication type:

Article

Three-Dimensional Integration of Organic Resistive Memory Devices.

Published in:

Advanced Materials, 2010, v. 22, n. 44, p. 5048, doi. 10.1002/adma.201002575

By:

Song, Sunghoon;
Cho, Byungjin;
Kim, Tae-Wook;
Ji, Yongsung;
Jo, Minseok;
Wang, Gunuk;
Choe, Minhyeok;
Kahng, Yung Ho;
Hwang, Hyunsang;
Lee, Takhee

Publication type:

Article

Organic Memory: Three-Dimensional Integration of Organic Resistive Memory Devices (Adv. Mater. 44/2010).

Published in:

Advanced Materials, 2010, v. 22, n. 44, p. 4915, doi. 10.1002/adma.201090142

By:

Song, Sunghoon;
Cho, Byungjin;
Kim, Tae-Wook;
Ji, Yongsung;
Jo, Minseok;
Wang, Gunuk;
Choe, Minhyeok;
Kahng, Yung Ho;
Hwang, Hyunsang;
Lee, Takhee

Publication type:

Article

Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices.

Published in:

Advanced Materials, 2010, v. 22, n. 11, p. 1228, doi. 10.1002/adma.200903203

By:

Cho, Byungjin;
Kim, Tae-Wook;
Song, Sunghoon;
Ji, Yongsung;
Jo, Minseok;
Hwang, Hyunsang;
Jung, Gun-Young;
Lee, Takhee

Publication type:

Article

Organic Memory: Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices (Adv. Mater. 11/2010).

Published in:

Advanced Materials, 2010, v. 22, n. 11, p. n/a, doi. 10.1002/adma.201090032

By:

Cho, Byungjin;
Kim, Tae-Wook;
Song, Sunghoon;
Ji, Yongsung;
Jo, Minseok;
Hwang, Hyunsang;
Jung, Gun-Young;
Lee, Takhee

Publication type:

Article

One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications.

Published in:

Advanced Materials, 2009, v. 21, n. 24, p. 2497, doi. 10.1002/adma.200803798

By:

Kim, Tae-Wook;
Choi, Hyejung;
Oh, Seung-Hwan;
Wang, Gunuk;
Kim, Dong-Yu;
Hwang, Hyunsang;
Lee, Takhee

Publication type:

Article

Hybrid Nonvolatile Memory Devices: One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications (Adv. Mater. 24/2009).

Published in:

Advanced Materials, 2009, v. 21, n. 24, p. n/a, doi. 10.1002/adma.200990092

By:

Kim, Tae-Wook;
Choi, Hyejung;
Oh, Seung-Hwan;
Wang, Gunuk;
Kim, Dong-Yu;
Hwang, Hyunsang;
Lee, Takhee

Publication type:

Article

Hybrid Complementary Logic Circuits of One-Dimensional Nanomaterials with Adjustment of Operation Voltage.

Published in:

Advanced Materials, 2009, v. 21, n. 21, p. 2156, doi. 10.1002/adma.200803510

By:

Jo, Gunho;
Hong, Woong-Ki;
Sohn, Jung Inn;
Jo, Minseok;
Shin, Jiyong;
Welland, Mark E.;
Hwang, Hyunsang;
Geckeler, Kurt E.;
Lee, Takhee

Publication type:

Article

Nanoscale Logic Circuits: Hybrid Complementary Logic Circuits of One-Dimensional Nanomaterials with Adjustment of Operation Voltage (Adv. Mater. 21/2009).

Published in:

Advanced Materials, 2009, v. 21, n. 21, p. n/a, doi. 10.1002/adma.200990077

By:

Jo, Gunho;
Hong, Woong-Ki;
Sohn, Jung Inn;
Jo, Minseok;
Shin, Jiyong;
Welland, Mark E.;
Hwang, Hyunsang;
Geckeler, Kurt E.;
Lee, Takhee

Publication type:

Article

Defect Engineering to Achieve Wake‐up Free HfO2‐Based Ferroelectrics.

Published in:

Advanced Engineering Materials, 2021, v. 23, n. 1, p. 1, doi. 10.1002/adem.202000791

By:

Kashir, Alireza;
Oh, Seungyeol;
Hwang, Hyunsang

Publication type:

Article

Uniform temperature distribution in microwave heating achieved via rotating electric field.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-03373-1

By:

Seo, Jongseon;
Han, Geonhui;
Hwang, Hyunsang

Publication type:

Article

Surface Diffusion and Epitaxial Self‐Planarization for Wafer‐Scale Single‐Grain Metal Chalcogenide Thin Films.

Published in:

Advanced Materials, 2021, v. 33, n. 35, p. 1, doi. 10.1002/adma.202102252

By:

Giri, Anupam;
Kumar, Manish;
Kim, Jaeseon;
Pal, Monalisa;
Banerjee, Writam;
Nikam, Revannath Dnyandeo;
Kwak, Junghyeok;
Kong, Minsik;
Kim, Seong Hun;
Thiyagarajan, Kaliannan;
Kim, Geonwoo;
Hwang, Hyunsang;
Lee, Hyun Hwi;
Lee, Donghwa;
Jeong, Unyong

Publication type:

Article

Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity.

Published in:

Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-019-55310-8

By:

Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Lee, Jongwon;
Rajput, Krishn Gopal;
Banerjee, Writam;
Hwang, Hyunsang

Publication type:

Article

Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-364

By:

Lee, Sangheon;
Woo, Jiyong;
Lee, Daeseok;
Cha, Euijun;
Hwang, Hyunsang

Publication type:

Article

3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS2 Electrode for High‐Density Neuromorphic Systems.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 27, p. 1, doi. 10.1002/adfm.202313802

By:

Lee, Kyumin;
Hwang, Seungkwon;
Kim, Dongmin;
Yoon, Jongwon;
Kwon, Jung‐Dae;
Kim, Yonghun;
Hwang, Hyunsang

Publication type:

Article

Atomic Threshold Switch Based on All‐2D Material Heterostructures with Excellent Control Over Filament Growth and Volatility.

Published in:

Advanced Functional Materials, 2022, v. 32, n. 29, p. 1, doi. 10.1002/adfm.202201749

By:

Nikam, Revannath Dnyandeo;
Hwang, Hyunsang

Publication type:

Article