Found: 12
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Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Graphene FETs.
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- Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300511
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- Article
Reconfigurable Single-Layer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 7, p. 1203, doi. 10.3390/nano13071203
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- Article
Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process.
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- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00362-w
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- Article
Dual-channel P-type ternary DNTT–graphene barristor.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-23669-w
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- Article
High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction.
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- Nanophotonics (21928606), 2022, v. 11, n. 5, p. 1041, doi. 10.1515/nanoph-2021-0738
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- Article
A Facile Method for Improving Detectivity of Graphene/p‐Type Silicon Heterojunction Photodetector.
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- Laser & Photonics Reviews, 2021, v. 15, n. 8, p. 1, doi. 10.1002/lpor.202000557
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- Article
Operation Principles of ZnO/Al<sub>2</sub>O<sub>3</sub>‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100247
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- Article
Direct Measurement of Transient Charging and Dipole Alignment Speed in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Gate Dielectric Using Graphene FETs.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100145
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- Article
Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al<sub>2</sub>O<sub>3</sub> interfacial layer.
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- Nanophotonics (21928606), 2021, v. 10, n. 5, p. 1573, doi. 10.1515/nanoph-2021-0002
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- Article
Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 6, p. 1186, doi. 10.3390/nano10061186
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- Article
Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process.
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- Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800805
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- Article
Operation Mechanism of a MoS2/BP Heterojunction FET.
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- Nanomaterials (2079-4991), 2018, v. 8, n. 10, p. 797, doi. 10.3390/nano8100797
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- Article