Found: 16
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Bioinspired Artificial Visual System Based on 2D WSe<sub>2</sub> Synapse Array (Adv. Funct. Mater. 41/2023).
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- Advanced Functional Materials, 2023, v. 33, n. 41, p. 1, doi. 10.1002/adfm.202303539
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Bioinspired Artificial Visual System Based on 2D WSe<sub>2</sub> Synapse Array.
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- Advanced Functional Materials, 2023, v. 33, n. 41, p. 1, doi. 10.1002/adfm.202303539
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- Article
Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices.
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- Coatings (2079-6412), 2020, v. 10, n. 8, p. 733, doi. 10.3390/coatings10080733
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Oxide-based synaptic transistors gated by solid biopolymer electrolytes.
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- Journal of Materials Science, 2023, v. 58, n. 28, p. 11740, doi. 10.1007/s10853-023-08746-3
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Integration of Dielectric and Ferroelectric Hafnium Aluminum Oxides for Thin‐Film Transistor Applications.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 10, p. 1, doi. 10.1002/pssr.202000258
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Integration of Dielectric and Ferroelectric Hafnium Aluminum Oxides for Thin‐Film Transistor Applications.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 10, p. 1, doi. 10.1002/pssr.202000258
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Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 12, p. N.PAG, doi. 10.1002/pssr.201900414
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- Article
Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800573
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- Article
Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800493
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Improved high-temperature switching characteristics of Y<sub>2</sub>O<sub>3</sub>/TiO <sub>x</sub> resistive memory through carrier depletion effect.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 5, p. 431, doi. 10.1002/pssr.201409039
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Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 1, p. 100, doi. 10.1002/pssr.201308143
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Flexible InGaZnO thin film transistors using stacked Y<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/Y<sub>2</sub>O<sub>3</sub> gate dielectrics grown at room temperature.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 4, p. 285, doi. 10.1002/pssr.201307047
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- Article
Investigation on the La Replacement and Little Additive Modification of High-Performance Permanent Magnetic Strontium-Ferrite.
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- Processes, 2021, v. 9, n. 6, p. 1034, doi. 10.3390/pr9061034
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Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices.
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- Materials (1996-1944), 2023, v. 16, n. 9, p. 3306, doi. 10.3390/ma16093306
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- Article
Emerging 2D Metal Oxides: From Synthesis to Device Integration (Adv. Mater. 21/2023).
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- Advanced Materials, 2023, v. 35, n. 21, p. 1, doi. 10.1002/adma.202370148
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Emerging 2D Metal Oxides: From Synthesis to Device Integration.
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- Advanced Materials, 2023, v. 35, n. 21, p. 1, doi. 10.1002/adma.202207774
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