Found: 15
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Synthesis and Phase Transition of Large‐Area Layered Ferroelectric Semiconductor α‐In<sub>2</sub>Se<sub>3</sub> via 2D Solid‐Phase Crystallization.
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- Advanced Electronic Materials, 2024, v. 10, n. 7, p. 1, doi. 10.1002/aelm.202300880
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- Article
2D Materials‐Based Static Random‐Access Memory.
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- Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202107894
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- Article
Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor.
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- Advanced Functional Materials, 2022, v. 32, n. 24, p. 1, doi. 10.1002/adfm.202200282
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- Article
Voltage–Time Transformation Model for Threshold Switching Spiking Neuron Based on Nucleation Theory.
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- Frontiers in Neuroscience, 2022, v. 16, p. 1, doi. 10.3389/fnins.2022.868671
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- Article
Device quantization policy in variation-aware in-memory computing design.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-021-04159-x
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- Article
Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf 1−x Zr x O 2 Diodes.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 10, p. 2685, doi. 10.3390/nano11102685
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Progress and Benchmark of Spiking Neuron Devices and Circuits.
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- Advanced Intelligent Systems (2640-4567), 2021, v. 3, n. 8, p. 1, doi. 10.1002/aisy.202100007
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SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-59121-0
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- Article
A Fluorographene‐Based Synaptic Transistor.
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- Advanced Materials Technologies, 2019, v. 4, n. 10, p. N.PAG, doi. 10.1002/admt.201900422
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- Article
Polymorphism Control of Layered MoTe<sub>2</sub> through Two-Dimensional Solid-Phase Crystallization.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-45142-x
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- Article
Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS<sub>2</sub> transistors.
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- Nano Research, 2019, v. 12, n. 2, p. 303, doi. 10.1007/s12274-018-2215-5
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- Article
Large-Area 2D Layered MoTe<sub>2</sub> by Physical Vapor Deposition and Solid-Phase Crystallization in a Tellurium-Free Atmosphere.
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- Advanced Materials Interfaces, 2017, v. 4, n. 17, p. n/a, doi. 10.1002/admi.201700157
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Corrigendum: Optically initialized robust valley-polarized holes in monolayer WSe<sub>2</sub>.
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- Nature Communications, 2016, v. 7, n. 2, p. 10396, doi. 10.1038/ncomms10396
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- Article
Optically initialized robust valley-polarized holes in monolayer WSe<sub>2</sub>.
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- Nature Communications, 2015, v. 6, n. 11, p. 8963, doi. 10.1038/ncomms9963
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- Article
Characterization and Modeling of Nonfilamentary Ta/TaO<sub>x</sub>/TiO<sub>2</sub>/Ti Analog Synaptic Device.
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- Scientific Reports, 2015, p. 10150, doi. 10.1038/srep10150
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- Article