Found: 18
Select item for more details and to access through your institution.
Resistance switching behavior of atomic layer deposited SrTiO<sub>3</sub> film through possible formation of Sr<sub>2</sub>Ti<sub>6</sub>O<sub>13</sub> or Sr<sub>1</sub>Ti<sub>11</sub>O<sub>20</sub> phases.
- Published in:
- Scientific Reports, 2016, p. 20550, doi. 10.1038/srep20550
- By:
- Publication type:
- Article
SET Kinetics of Ag/HfO 2 -Based Diffusive Memristors under Various Counter-Electrode Materials.
- Published in:
- Micromachines, 2023, v. 14, n. 3, p. 571, doi. 10.3390/mi14030571
- By:
- Publication type:
- Article
Resistive Switching of Individual, Chemically Synthesized TiO<sub>2</sub> Nanoparticles.
- Published in:
- Small, 2015, v. 11, n. 48, p. 6444, doi. 10.1002/smll.201502100
- By:
- Publication type:
- Article
Electrical Conductivity of Epitaxial SrTiO<sub>3</sub> Thin Films as a Function of Oxygen Partial Pressure and Temperature.
- Published in:
- Journal of the American Ceramic Society, 2006, v. 89, n. 9, p. 2845, doi. 10.1111/j.1551-2916.2006.01178.x
- By:
- Publication type:
- Article
Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO<sub>2</sub> thin films.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 751, doi. 10.1002/pssa.201431489
- By:
- Publication type:
- Article
Study of atomic layer deposited Zr O<sub>2</sub> and Zr O<sub>2</sub>/ Ti O<sub>2</sub> films for resistive switching application.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 2, p. 301, doi. 10.1002/pssa.201330034
- By:
- Publication type:
- Article
A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks.
- Published in:
- Advanced Intelligent Systems (2640-4567), 2023, v. 5, n. 11, p. 1, doi. 10.1002/aisy.202300129
- By:
- Publication type:
- Article
Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>‐Based Memristive Devices.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 12, p. 1, doi. 10.1002/aelm.202300520
- By:
- Publication type:
- Article
Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200549
- By:
- Publication type:
- Article
ReRAM: Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices (Adv. Electron. Mater. 2/2018).
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201870011
- By:
- Publication type:
- Article
Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700243
- By:
- Publication type:
- Article
Utilizing the Switching Stochasticity of HfO<sub>2</sub>/TiO<sub>x</sub>-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns.
- Published in:
- Frontiers in Neuroscience, 2021, v. 15, p. 1, doi. 10.3389/fnins.2021.661856
- By:
- Publication type:
- Article
Disentanglement of growth dynamic and thermodynamic effects in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterostructures.
- Published in:
- Scientific Reports, 2016, p. 22410, doi. 10.1038/srep22410
- By:
- Publication type:
- Article
Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors.
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 15, p. 1, doi. 10.1002/adfm.202111242
- By:
- Publication type:
- Article
Atomic-Scale Measurement of Structure and Chemistry of a Single-Unit-Cell Layer of LaAlO3 Embedded in SrTiO3.
- Published in:
- Microscopy & Microanalysis, 2013, v. 19, n. 2, p. 310, doi. 10.1017/S1431927612014407
- By:
- Publication type:
- Article
Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS 2.
- Published in:
- Surfaces (2571-9637), 2023, v. 6, n. 4, p. 351, doi. 10.3390/surfaces6040025
- By:
- Publication type:
- Article
Atomically resolved electronic properties in single layer graphene on α-Al<sub>2</sub>O<sub>3</sub> (0001) by chemical vapor deposition.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-22889-4
- By:
- Publication type:
- Article
Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices.
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 40, p. 6414, doi. 10.1002/adfm.201500865
- By:
- Publication type:
- Article