Found: 13
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Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-338
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- Article
Layered MoS<sub>2</sub> grown on c -sapphire by pulsed laser deposition.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 3, p. 187, doi. 10.1002/pssr.201409561
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- Article
Semipolar (11\bar 2\bar 2) ZnO thin films grown on LaAlO<sub>3</sub>-buffered LSAT (112) single crystals by pulsed laser deposition.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 4, p. 293, doi. 10.1002/pssr.201307037
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- Article
Single domain nonpolar (13 $ \bar 4 $.
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- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 3, p. 114, doi. 10.1002/pssr.201105508
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- Article
Epitaxy of m -plane ZnO on (112) LaAlO<sub>3</sub> substrate.
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- Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 4, p. 109, doi. 10.1002/pssr.200903009
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- Article
Gas Adsorption Mechanism on 2D Materials: The Hyperpolarizability Evolution Analyzed by Nonlinear Optics.
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- Advanced Functional Materials, 2024, v. 34, n. 42, p. 1, doi. 10.1002/adfm.202406005
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- Article
Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS<sub>2</sub>.
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- Advanced Optical Materials, 2019, v. 7, n. 2, p. N.PAG, doi. 10.1002/adom.201801250
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- Article
RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interface.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 7, p. n/a, doi. 10.1002/pssa.201600944
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- Article
Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 10, p. 2201, doi. 10.1002/pssa.201532367
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- Article
The Role of GaN in the Heterostructure WS 2 /GaN for SERS Applications.
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- Materials (1996-1944), 2023, v. 16, n. 8, p. 3054, doi. 10.3390/ma16083054
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- Article
Room temperature epitaxial growth of (001) CeO<sub>2</sub> on (001) LaAlO<sub>3</sub> by pulsed laser deposition.
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- Crystal Research & Technology, 2013, v. 48, n. 5, p. 308, doi. 10.1002/crat.201300002
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- Article
Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 14, p. N.PAG, doi. 10.3390/nano12142435
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- Article
Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS 2 Layer.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 6, p. 1406, doi. 10.3390/nano11061406
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- Article