Very‐Low‐Temperature Integrated Complementary Graphene‐Barristor‐Based Inverter for Thin‐Film Transistor Applications.
- Published in:
- Annalen der Physik, 2018, v. 530, n. 10, p. N.PAG, doi. 10.1002/andp.201800224
- By:
- Publication type:
- Article
Works by Heo, Sunwoo
Results: 6
1
2
Gate‐Controlled Graphene–Silicon Schottky Junction Photodetector.
- Published in:
- Small, 2018, v. 14, n. 28, p. 1, doi. 10.1002/smll.201801182
- By:
- Publication type:
- Article
3
Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride.
- Published in:
- Advanced Functional Materials, 2018, v. 28, n. 40, p. 1, doi. 10.1002/adfm.201804235
- By:
- Publication type:
- Article
4
Graphene Photodetectors: High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction (Adv. Electron. Mater. 6/2019).
- Published in:
- 2019
- By:
- Publication type:
- Image
5
High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201800957
- By:
- Publication type:
- Article
6
ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors.
- Published in:
- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-09998-x
- By:
- Publication type:
- Article