Design of p‐WSe<sub>2</sub>/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors.
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 4, p. 1, doi. 10.1002/adfm.202107992
- By:
- Publication type:
- Article
Works by Heo, Junseok
Results: 22
1
2
In-sensor image memorization and encoding via optical neurons for bio-stimulus domain reduction toward visual cognitive processing.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-32790-3
- By:
- Publication type:
- Article
3
Enhanced Photoresponsivity of Multilayer MoS<sub>2</sub> Phototransistor Using Localized Au Schottky Junction Formed by Spherical‐Lens Photolithography.
- Published in:
- Advanced Materials Interfaces, 2019, v. 6, n. 8, p. N.PAG, doi. 10.1002/admi.201900053
- By:
- Publication type:
- Article
4
Hetero-integration enables fast switching time-of-flight sensors for light detection and ranging.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-59677-x
- By:
- Publication type:
- Article
5
CdSe/ZnS quantum dot encapsulated MoS<sub>2</sub> phototransistor for enhanced radiation hardness.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-018-37902-y
- By:
- Publication type:
- Article
6
Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.
- Published in:
- Nature Communications, 2013, v. 4, n. 4, p. 1675, doi. 10.1038/ncomms2691
- By:
- Publication type:
- Article
7
Cationic Molecular Metal Chalcogenide Ligand‐Passivated Colloidal Quantum Dots and Their Application to Suppressed Dark‐Current Near‐Infrared Photodetectors.
- Published in:
- Advanced Materials Technologies, 2023, v. 8, n. 11, p. 1, doi. 10.1002/admt.202201864
- By:
- Publication type:
- Article
8
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101406
- By:
- Publication type:
- Article
9
Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> Wrapped‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Field‐Effect Transistors for Dynamic Threshold Voltage Control.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100306
- By:
- Publication type:
- Article
10
Asymmetric Double‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201800938
- By:
- Publication type:
- Article
11
Photoacoustic Energy Sensor for Nanosecond Optical Pulse Measurement.
- Published in:
- Sensors (14248220), 2018, v. 18, n. 11, p. 3879, doi. 10.3390/s18113879
- By:
- Publication type:
- Article
12
Effect of Cyano Substitution on Non‐Fullerene Acceptor for Near‐Infrared Organic Photodetectors above 1000 nm (Adv. Funct. Mater. 8/2023).
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202370042
- By:
- Publication type:
- Article
13
Effect of Cyano Substitution on Non‐Fullerene Acceptor for Near‐Infrared Organic Photodetectors above 1000 nm.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202211486
- By:
- Publication type:
- Article
14
Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-08323-9
- By:
- Publication type:
- Article
15
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β -Ga 2 O 3 Field-Effect Transistors.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 2, p. 494, doi. 10.3390/nano11020494
- By:
- Publication type:
- Article
16
Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric.
- Published in:
- Micromachines, 2021, v. 12, n. 12, p. 1441, doi. 10.3390/mi12121441
- By:
- Publication type:
- Article
17
Strategic Design of A<sub>1</sub>–π–A<sub>2</sub>‐Type Polymer Acceptors for Highly Sensitive Near‐Infrared All‐Polymer Photodetectors.
- Published in:
- Advanced Optical Materials, 2025, v. 13, n. 8, p. 1, doi. 10.1002/adom.202402800
- By:
- Publication type:
- Article
18
Vertically Stacked Broadband GNIF‐MoS<sub>2</sub>/p‐Ge Photodetector for Dark Current Suppression, High Photoresponse, and Ultrafast Transient Response.
- Published in:
- Advanced Optical Materials, 2024, v. 12, n. 31, p. 1, doi. 10.1002/adom.202401363
- By:
- Publication type:
- Article
19
Achieving Highly Sensitive Near‐Infrared Organic Photodetectors using Asymmetric Non‐Fullerene Acceptor.
- Published in:
- Advanced Optical Materials, 2023, v. 11, n. 17, p. 1, doi. 10.1002/adom.202300312
- By:
- Publication type:
- Article
20
Vertically Stacked vdW Double Heterojunction Photodiode with Ultrawide Bandgap Gallium Oxide Electron Reservoir.
- Published in:
- Advanced Optical Materials, 2022, v. 10, n. 19, p. 1, doi. 10.1002/adom.202200611
- By:
- Publication type:
- Article
21
Flexible and Wavelength-Selective MoS<sub>2</sub> Phototransistors with Monolithically Integrated Transmission Color Filters.
- Published in:
- Scientific Reports, 2017, p. 40945, doi. 10.1038/srep40945
- By:
- Publication type:
- Article
22
Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.
- Published in:
- Scientific Reports, 2016, p. 30107, doi. 10.1038/srep30107
- By:
- Publication type:
- Article