Works by Heo, Junseok
Results: 21
Enhanced Photoresponsivity of Multilayer MoS<sub>2</sub> Phototransistor Using Localized Au Schottky Junction Formed by Spherical‐Lens Photolithography.
- Published in:
- Advanced Materials Interfaces, 2019, v. 6, n. 8, p. N.PAG, doi. 10.1002/admi.201900053
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- Article
Hetero-integration enables fast switching time-of-flight sensors for light detection and ranging.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-59677-x
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- Article
In-sensor image memorization and encoding via optical neurons for bio-stimulus domain reduction toward visual cognitive processing.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-32790-3
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- Article
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β -Ga 2 O 3 Field-Effect Transistors.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 2, p. 494, doi. 10.3390/nano11020494
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- Article
Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.
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- Nature Communications, 2013, v. 4, n. 4, p. 1675, doi. 10.1038/ncomms2691
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- Article
Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-08323-9
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- Article
Effect of Cyano Substitution on Non‐Fullerene Acceptor for Near‐Infrared Organic Photodetectors above 1000 nm (Adv. Funct. Mater. 8/2023).
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202370042
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- Article
Effect of Cyano Substitution on Non‐Fullerene Acceptor for Near‐Infrared Organic Photodetectors above 1000 nm.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202211486
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- Article
Design of p‐WSe<sub>2</sub>/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors.
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- Advanced Functional Materials, 2022, v. 32, n. 4, p. 1, doi. 10.1002/adfm.202107992
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- Article
Flexible and Wavelength-Selective MoS<sub>2</sub> Phototransistors with Monolithically Integrated Transmission Color Filters.
- Published in:
- Scientific Reports, 2017, p. 40945, doi. 10.1038/srep40945
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- Article
Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.
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- Scientific Reports, 2016, p. 30107, doi. 10.1038/srep30107
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- Article
Cationic Molecular Metal Chalcogenide Ligand‐Passivated Colloidal Quantum Dots and Their Application to Suppressed Dark‐Current Near‐Infrared Photodetectors.
- Published in:
- Advanced Materials Technologies, 2023, v. 8, n. 11, p. 1, doi. 10.1002/admt.202201864
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- Article
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101406
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- Article
Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> Wrapped‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Field‐Effect Transistors for Dynamic Threshold Voltage Control.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100306
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- Article
Asymmetric Double‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201800938
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- Article
Vertically Stacked Broadband GNIF‐MoS<sub>2</sub>/p‐Ge Photodetector for Dark Current Suppression, High Photoresponse, and Ultrafast Transient Response.
- Published in:
- Advanced Optical Materials, 2024, v. 12, n. 31, p. 1, doi. 10.1002/adom.202401363
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- Article
Achieving Highly Sensitive Near‐Infrared Organic Photodetectors using Asymmetric Non‐Fullerene Acceptor.
- Published in:
- Advanced Optical Materials, 2023, v. 11, n. 17, p. 1, doi. 10.1002/adom.202300312
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- Article
Vertically Stacked vdW Double Heterojunction Photodiode with Ultrawide Bandgap Gallium Oxide Electron Reservoir.
- Published in:
- Advanced Optical Materials, 2022, v. 10, n. 19, p. 1, doi. 10.1002/adom.202200611
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- Article
CdSe/ZnS quantum dot encapsulated MoS<sub>2</sub> phototransistor for enhanced radiation hardness.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-018-37902-y
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- Publication type:
- Article
Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric.
- Published in:
- Micromachines, 2021, v. 12, n. 12, p. 1441, doi. 10.3390/mi12121441
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- Article
Photoacoustic Energy Sensor for Nanosecond Optical Pulse Measurement.
- Published in:
- Sensors (14248220), 2018, v. 18, n. 11, p. 3879, doi. 10.3390/s18113879
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- Article