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Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-59033-z
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- Article
Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence.
- Published in:
- Scientific Reports, 2016, p. 37511, doi. 10.1038/srep37511
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- Article
On the fractal nature of light-emitting structures based on III-N nanomaterials and related phenomena.
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- Semiconductors, 2016, v. 50, n. 9, p. 1173, doi. 10.1134/S1063782616090207
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- Article
Electrochemical etching of p-n-GaN/AlGaN photoelectrodes.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 482, doi. 10.1134/S1063785016050151
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- Article
Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2178, doi. 10.1007/s11664-015-4305-4
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- Article
Photo-Electrochemical Etching in the Process of Direct H2 Generation by Illumination of GaN-Based Material Structures Immersed in Water.
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- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 1/2, p. -1, doi. 10.1142/S0129156416400097
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- Article
Defect-Related Luminescence in Undoped GaN Grown by HVPE.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1281, doi. 10.1007/s11664-014-3540-4
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- Article
Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy.
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- Technical Physics Letters, 2014, v. 40, n. 7, p. 574, doi. 10.1134/S1063785014070104
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- Article
Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy.
- Published in:
- Semiconductors, 2014, v. 48, n. 2, p. 245, doi. 10.1134/S1063782614020262
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- Article