Works by He, Congli

Results: 25

Perpendicular Magnetization Switching Driven by Spin‐Orbit Torque for Artificial Synapses in Epitaxial Pt‐Based Multilayers.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200845

By:

Zhang, Qiqi;
Zhao, Yunchi;
He, Congli;
Huo, Yuping;
Cui, Baoshan;
Zhu, Zengtai;
Zhang, Guangyu;
Yu, Guoqiang;
He, Bin;
Zhang, Yi;
Lyu, Haochang;
Guo, Yaqin;
Qi, Jie;
Shen, Shipeng;
Wei, Hongxiang;
Shen, Baogen;
Wang, Shouguo

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202270047

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200238

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

2D Transistors: Vertical Integration of 2D Building Blocks for All‐2D Electronics (Adv. Electron. Mater. 12/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202070048

By:

Tang, Jian;
Wang, Qinqin;
Wei, Zheng;
Shen, Cheng;
Lu, Xiaobo;
Wang, Shuopei;
Zhao, Yanchong;
Liu, Jieying;
Li, Na;
Chu, Yanbang;
Tian, Jinpeng;
Wu, Fanfan;
Yang, Wei;
He, Congli;
Yang, Rong;
Shi, Dongxia;
Watanabe, Kenji;
Taniguchi, Takashi;
Zhang, Guangyu

Publication type:

Article

Vertical Integration of 2D Building Blocks for All‐2D Electronics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000550

By:

Tang, Jian;
Wang, Qinqin;
Wei, Zheng;
Shen, Cheng;
Lu, Xiaobo;
Wang, Shuopei;
Zhao, Yanchong;
Liu, Jieying;
Li, Na;
Chu, Yanbang;
Tian, Jinpeng;
Wu, Fanfan;
Yang, Wei;
He, Congli;
Yang, Rong;
Shi, Dongxia;
Watanabe, Kenji;
Taniguchi, Takashi;
Zhang, Guangyu

Publication type:

Article

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970018

By:

Wang, Shuopei;
He, Congli;
Tang, Jian;
Lu, Xiaobo;
Shen, Cheng;
Yu, Hua;
Du, Luojun;
Li, Jiafang;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

New Floating Gate Memory with Excellent Retention Characteristics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800726

By:

Wang, Shuopei;
He, Congli;
Tang, Jian;
Lu, Xiaobo;
Shen, Cheng;
Yu, Hua;
Du, Luojun;
Li, Jiafang;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Electrical detection of spin pumping in van der Waals ferromagnetic Cr2Ge2Te6 with low magnetic damping.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39529-8

By:

Xu, Hongjun;
Jia, Ke;
Huang, Yuan;
Meng, Fanqi;
Zhang, Qinghua;
Zhang, Yu;
Cheng, Chen;
Lan, Guibin;
Dong, Jing;
Wei, Jinwu;
Feng, Jiafeng;
He, Congli;
Yuan, Zhe;
Zhu, Mingliang;
He, Wenqing;
Wan, Caihua;
Wei, Hongxiang;
Wang, Shouguo;
Shao, Qiming;
Gu, Lin

Publication type:

Article

Low power flexible monolayer MoS2 integrated circuits.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39390-9

By:

Tang, Jian;
Wang, Qinqin;
Tian, Jinpeng;
Li, Xiaomei;
Li, Na;
Peng, Yalin;
Li, Xiuzhen;
Zhao, Yanchong;
He, Congli;
Wu, Shuyu;
Li, Jiawei;
Guo, Yutuo;
Huang, Biying;
Chu, Yanbang;
Ji, Yiru;
Shang, Dashan;
Du, Luojun;
Yang, Rong;
Yang, Wei;
Bai, Xuedong

Publication type:

Article

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe2.

Published in:

Advanced Materials, 2020, v. 32, n. 17, p. 1, doi. 10.1002/adma.202000513

By:

Xu, Hongjun;
Wei, Jinwu;
Zhou, Hengan;
Feng, Jiafeng;
Xu, Teng;
Du, Haifeng;
He, Congli;
Huang, Yuan;
Zhang, Junwei;
Liu, Yizhou;
Wu, Han‐Chun;
Guo, Chenyang;
Wang, Xiao;
Guang, Yao;
Wei, Hongxiang;
Peng, Yong;
Jiang, Wanjun;
Yu, Guoqiang;
Han, Xiufeng

Publication type:

Article

Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries.

Published in:

Scientific Reports, 2016, p. 23956, doi. 10.1038/srep23956

By:

Yu, Guoqiang;
Akyol, Mustafa;
Upadhyaya, Pramey;
Li, Xiang;
He, Congli;
Fan, Yabin;
Montazeri, Mohammad;
Alzate, Juan G.;
Lang, Murong;
Wong, Kin L.;
Khalili Amiri, Pedram;
Wang, Kang L.

Publication type:

Article

Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films.

Published in:

Nature Communications, 2018, p. 1, doi. 10.1038/s41467-018-06059-7

By:

Qiming Shao;
Chi Tang;
Guoqiang Yu;
Navabi, Aryan;
Hao Wu;
Congli He;
Junxue Li;
Upadhyaya, Pramey;
Peng Zhang;
Seyed Armin Razavi;
Qing Lin He;
Yawen Liu;
Pei Yang;
Se Kwon Kim;
Cheng Zheng;
Yizhou Liu;
Lei Pan;
Lake, Roger K.;
Xiufeng Han;
Yaroslav Tserkovnyak

Publication type:

Article

A General Route Towards Defect and Pore Engineering in Graphene.

Published in:

Small, 2014, v. 10, n. 11, p. 2280, doi. 10.1002/smll.201303671

By:

Xie, Guibai;
Yang, Rong;
Chen, Peng;
Zhang, Jing;
Tian, Xuezeng;
Wu, Shuang;
Zhao, Jing;
Cheng, Meng;
Yang, Wei;
Wang, Duoming;
He, Congli;
Bai, Xuedong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Growth, Characterization, and Properties of Nanographene.

Published in:

Small, 2012, v. 8, n. 9, p. 1429, doi. 10.1002/smll.201101827

By:

Yang, Wei;
He, Congli;
Zhang, Lianchang;
Wang, Yi;
Shi, Zhiwen;
Cheng, Meng;
Xie, Guibai;
Wang, Duoming;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Tunable Electroluminescence in Planar Graphene/SiO2 Memristors.

Published in:

Advanced Materials, 2013, v. 25, n. 39, p. 5593, doi. 10.1002/adma.201302447

By:

He, Congli;
Li, Jiafang;
Wu, Xing;
Chen, Peng;
Zhao, Jing;
Yin, Kuibo;
Cheng, Meng;
Yang, Wei;
Xie, Guibai;
Wang, Duoming;
Liu, Donghua;
Yang, Rong;
Shi, Dongxia;
Li, Zhiyuan;
Sun, Litao;
Zhang, Guangyu

Publication type:

Article

Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition (Adv. Mater. Interfaces 32/2022).

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 32, p. 1, doi. 10.1002/admi.202270176

By:

Huang, Biying;
Li, Na;
Wang, Qinqin;
Ouyang, Chen;
He, Congli;
Zhang, Lianchang;
Du, Luojun;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition.

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 32, p. 1, doi. 10.1002/admi.202201558

By:

Huang, Biying;
Li, Na;
Wang, Qinqin;
Ouyang, Chen;
He, Congli;
Zhang, Lianchang;
Du, Luojun;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Bioinspired In‐Sensor Reservoir Computing for Self‐Adaptive Visual Recognition with Two‐Dimensional Dual‐Mode Phototransistors.

Published in:

Advanced Optical Materials, 2023, v. 11, n. 15, p. 1, doi. 10.1002/adom.202300271

By:

Jiang, Nanjia;
Tang, Jian;
Zhang, Woyu;
Li, Yi;
Li, Na;
Li, Xiuzhen;
Chen, Xi;
Fang, Renrui;
Guo, Zeyu;
Wang, Fei;
Wang, Jun;
Li, Zhi;
He, Congli;
Zhang, Guangyu;
Wang, Zhongrui;
Shang, Dashan

Publication type:

Article

Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses.

Published in:

Nano Research, 2022, v. 15, n. 6, p. 5418, doi. 10.1007/s12274-022-4122-z

By:

Li, Na;
He, Congli;
Wang, Qinqin;
Tang, Jianshi;
Zhang, Qingtian;
Shen, Cheng;
Tang, Jian;
Huang, Heyi;
Wang, Shuopei;
Li, Jiawei;
Huang, Biying;
Wei, Zheng;
Guo, Yutuo;
Yuan, Jiahao;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Interface‐Induced Anomalous Behavior of Magnetism in FexGeTe2/Pt Bilayer.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 6, p. 1, doi. 10.1002/adfm.202414742

By:

Zhang, Qiqi;
Xu, Hongjun;
Xu, Zhongchen;
He, Congli;
Li, Xinlu;
Lan, Guibin;
Zhang, Jia;
Shi, Youguo;
Zhang, Qinghua;
Yang, Chao‐Yao;
Chen, Jing;
Gao, Yawei;
Hu, Chaoqun;
Li, Jiahui;
Zhao, Yunchi;
Huo, Yuping;
Ge, Jian;
Zhang, Yu;
Chang, Hao‐Kai;
Huang, Chi‐Yen

Publication type:

Article

2D Semiconductor‐Based Optoelectronics for Artificial Vision.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 52, p. 1, doi. 10.1002/adfm.202305589

By:

Li, Na;
Zhang, Songge;
Peng, Yalin;
Li, Xiuzhen;
Zhang, Yangkun;
He, Congli;
Zhang, Guangyu

Publication type:

Article

Artificial Synapses: A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing (Adv. Funct. Mater. 27/2021).

Published in:

Advanced Functional Materials, 2021, v. 31, n. 27, p. 1, doi. 10.1002/adfm.202170197

By:

Tang, Jian;
He, Congli;
Tang, Jianshi;
Yue, Kun;
Zhang, Qingtian;
Liu, Yizhou;
Wang, Qinqin;
Wang, Shuopei;
Li, Na;
Shen, Cheng;
Zhao, Yanchong;
Liu, Jieying;
Yuan, Jiahao;
Wei, Zheng;
Li, Jiawei;
Watanabe, Kenji;
Taniguchi, Takashi;
Shang, Dashan;
Wang, Shouguo;
Yang, Wei

Publication type:

Article

A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 27, p. 1, doi. 10.1002/adfm.202011083

By:

Tang, Jian;
He, Congli;
Tang, Jianshi;
Yue, Kun;
Zhang, Qingtian;
Liu, Yizhou;
Wang, Qinqin;
Wang, Shuopei;
Li, Na;
Shen, Cheng;
Zhao, Yanchong;
Liu, Jieying;
Yuan, Jiahao;
Wei, Zheng;
Li, Jiawei;
Watanabe, Kenji;
Taniguchi, Takashi;
Shang, Dashan;
Wang, Shouguo;
Yang, Wei

Publication type:

Article

Inside Back Cover: Wafer‐Scale Oxygen‐Doped MoS2 Monolayer (Small Methods 6/2021).

Published in:

Small Methods, 2021, v. 5, n. 6, p. 1, doi. 10.1002/smtd.202170026

By:

Wei, Zheng;
Tang, Jian;
Li, Xuanyi;
Chi, Zhen;
Wang, Yu;
Wang, Qinqin;
Han, Bo;
Li, Na;
Huang, Biying;
Li, Jiawei;
Yu, Hua;
Yuan, Jiahao;
Chen, Hailong;
Sun, Jiatao;
Chen, Lan;
Wu, Kehui;
Gao, Peng;
He, Congli;
Yang, Wei;
Shi, Dongxia

Publication type:

Article

Wafer‐Scale Oxygen‐Doped MoS2 Monolayer.

Published in:

Small Methods, 2021, v. 5, n. 6, p. 1, doi. 10.1002/smtd.202100091

By:

Wei, Zheng;
Tang, Jian;
Li, Xuanyi;
Chi, Zhen;
Wang, Yu;
Wang, Qinqin;
Han, Bo;
Li, Na;
Huang, Biying;
Li, Jiawei;
Yu, Hua;
Yuan, Jiahao;
Chen, Hailong;
Sun, Jiatao;
Chen, Lan;
Wu, Kehui;
Gao, Peng;
He, Congli;
Yang, Wei;
Shi, Dongxia

Publication type:

Article

Works by He, Congli

Perpendicular Magnetization Switching Driven by Spin‐Orbit Torque for Artificial Synapses in Epitaxial Pt‐Based Multilayers.

Highly Stretchable MoS<sub>2</sub>‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022).

Highly Stretchable MoS<sub>2</sub>‐Based Transistors with Opto‐Synaptic Functionalities.

2D Transistors: Vertical Integration of 2D Building Blocks for All‐2D Electronics (Adv. Electron. Mater. 12/2020).

Vertical Integration of 2D Building Blocks for All‐2D Electronics.

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).

New Floating Gate Memory with Excellent Retention Characteristics.

Electrical detection of spin pumping in van der Waals ferromagnetic Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> with low magnetic damping.

Low power flexible monolayer MoS<sub>2</sub> integrated circuits.

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe<sub>2</sub>.

Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries.

Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films.

A General Route Towards Defect and Pore Engineering in Graphene.

Growth, Characterization, and Properties of Nanographene.

Tunable Electroluminescence in Planar Graphene/SiO<sub>2</sub> Memristors.

Optoelectronic Synapses Based on MoS<sub>2</sub> Transistors for Accurate Image Recognition (Adv. Mater. Interfaces 32/2022).

Optoelectronic Synapses Based on MoS<sub>2</sub> Transistors for Accurate Image Recognition.

Bioinspired In‐Sensor Reservoir Computing for Self‐Adaptive Visual Recognition with Two‐Dimensional Dual‐Mode Phototransistors.

Gate-tunable large-scale flexible monolayer MoS<sub>2</sub> devices for photodetectors and optoelectronic synapses.

Interface‐Induced Anomalous Behavior of Magnetism in Fe<sub>x</sub>GeTe<sub>2</sub>/Pt Bilayer.

2D Semiconductor‐Based Optoelectronics for Artificial Vision.

Artificial Synapses: A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing (Adv. Funct. Mater. 27/2021).

A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing.

Inside Back Cover: Wafer‐Scale Oxygen‐Doped MoS<sub>2</sub> Monolayer (Small Methods 6/2021).

Wafer‐Scale Oxygen‐Doped MoS<sub>2</sub> Monolayer.