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Free and bound excitonic effects in Al<sub>0.5</sub>Ga<sub>0.5</sub>N/Al<sub>0.35</sub>Ga<sub>0.65</sub>N MQWs with different Si-doping levels in the well layers.
- Published in:
- Scientific Reports, 2015, p. 13046, doi. 10.1038/srep13046
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- Article
Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces.
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- Crystals (2073-4352), 2023, v. 13, n. 7, p. 1027, doi. 10.3390/cryst13071027
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- Article
Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate.
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- Crystals (2073-4352), 2022, v. 12, n. 1, p. 38, doi. 10.3390/cryst12010038
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- Article
Planar Compound Eye Lens for Enhanced Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet LEDs.
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- Advanced Photonics Research, 2024, v. 5, n. 3, p. 1, doi. 10.1002/adpr.202300309
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- Article
Planar Compound Eye Lens for Enhanced Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet LEDs.
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- Advanced Photonics Research, 2024, v. 5, n. 3, p. 1, doi. 10.1002/adpr.202300309
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- Article
Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 20, p. 1, doi. 10.1002/pssa.202100351
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- Article
Modulating Carrier Distribution for Efficient AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Introducing an Asymmetric Quantum Well.
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- Journal of Electronic Materials, 2021, v. 50, n. 5, p. 2643, doi. 10.1007/s11664-021-08831-w
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- Article
High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure.
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- Advanced Materials, 2016, v. 28, n. 36, p. 7978, doi. 10.1002/adma.201600990
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- Article
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.
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- Scientific Reports, 2017, p. 42747, doi. 10.1038/srep42747
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- Article
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.
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- Scientific Reports, 2016, p. 35934, doi. 10.1038/srep35934
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- Article
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system.
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- Scientific Reports, 2016, p. 25124, doi. 10.1038/srep25124
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- Article
Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition.
- Published in:
- Scientific Reports, 2016, p. 23020, doi. 10.1038/srep23020
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- Article
Surface Modification of Polyglycolic Acid Fibers by Hydrogen Peroxide for Enhancing Hydrophilicity and Cytocompatibility.
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- Journal of Donghua University (English Edition), 2017, v. 34, n. 6, p. 768
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- Article
Preparation and cytocompatibility of PLGA scaffolds with controllable fiber morphology and diameter using electrospinning method.
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- Journal of Biomedical Materials Research, Part B: Applied Biomaterials, 2008, v. 87B, n. 1, p. 26, doi. 10.1002/jbm.b.31060
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- Article
A Two-Level Communication Routing Algorithm Based on Vehicle Attribute Information for Vehicular Ad Hoc Network.
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- Wireless Communications & Mobile Computing, 2021, p. 1, doi. 10.1155/2021/6692741
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- Article
A Two-Level Communication Routing Algorithm Based on Vehicle Attribute Information for Vehicular Ad Hoc Network.
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- Wireless Communications & Mobile Computing, 2021, p. 1, doi. 10.1155/2021/6692741
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- Article
Graph-Based Resource Allocation for Air-Ground Integrated Networks.
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- Mobile Networks & Applications, 2022, v. 27, n. 2, p. 492, doi. 10.1007/s11036-020-01694-1
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- Article
Modification of polyglycolic acid and poly lactic-co-glycolic acid fibers by ultrasonic treatment for enhancing hydrophilicity and cytocompatibility.
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- Journal of Industrial Textiles, 2016, v. 45, n. 4, p. 516, doi. 10.1177/1528083714537104
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- Article
Enhancing GaN/Al x Ga 1−x N-Based Heterojunction Phototransistors: The Role of Graded Base Structures in Performance Improvement.
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- Micromachines, 2024, v. 15, n. 6, p. 778, doi. 10.3390/mi15060778
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- Article
Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect.
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- Nano-Micro Letters, 2021, v. 13, n. 1, p. 1, doi. 10.1007/s40820-021-00589-4
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- Article