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High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO<sub>2</sub> gate insulator.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 6, p. 425, doi. 10.1049/el.2013.0149
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- Article