Found: 5
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Electrical characterization of 4H–SiC Schottky diodes with a RuO<sub>2</sub> and a RuWO<sub> x </sub> Schottky contacts.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 783, doi. 10.1007/s10854-007-9409-z
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- Article
COMPOSITION RELATED ELECTRICAL ACTIVE DEFECT STATES OF INGAAS AND GAASN.
- Published in:
- Advances in Electrical & Electronic Engineering, 2017, v. 15, n. 1, p. 114, doi. 10.15598/aeee.v15i1.2023
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- Article
Trap-Assisted Tunneling in the Schottky Barrier.
- Published in:
- Radioengineering, 2013, v. 22, n. 1, p. 240
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- Publication type:
- Article
A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling.
- Published in:
- Radioengineering, 2012, v. 21, n. 1, p. 213
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- Publication type:
- Article
A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling.
- Published in:
- Radioengineering, 2012, v. 21, n. 1, p. 213
- By:
- Publication type:
- Article