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Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene.
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- Materials (1996-1944), 2023, v. 16, n. 4, p. 1391, doi. 10.3390/ma16041391
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- Article
Ion-Beam Synthesis of Structure-Oriented Iron Nanoparticles in Single-Crystalline Rutile TiO 2.
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- Crystals (2073-4352), 2023, v. 13, n. 2, p. 355, doi. 10.3390/cryst13020355
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- Article
Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 24, p. 4449, doi. 10.3390/nano12244449
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- Article
Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF<sub>2</sub> Dielectric Matrix.
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- JETP Letters, 2022, v. 116, n. 9, p. 628, doi. 10.1134/S0021364022602159
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- Article
The Nature of Ferromagnetism in a System of Self-Ordered α-FeSi 2 Nanorods on a Si(111)-4° Vicinal Surface: Experiment and Theory.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 20, p. 3707, doi. 10.3390/nano12203707
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CVD SYNTHESIS AND THE STRUCTURE OF VERTICALLY ALIGNED CNT ARRAYS.
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- Journal of Structural Chemistry, 2022, v. 63, n. 7, p. 1145, doi. 10.1134/S0022476622070095
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- Article
Graphene/Hexagonal Boron Nitride Composite Nanoparticles for 2D Printing Technologies.
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- Advanced Engineering Materials, 2022, v. 24, n. 3, p. 1, doi. 10.1002/adem.202100917
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- Article
Specific Features of the Atomic Structure of Iron Silicide Nanocrystals in a Silicon Matrix.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 601, doi. 10.1134/S1063774521040088
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- Article
Extended Defects in O+-Implanted Si Layers and Their Luminescence.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 625, doi. 10.1134/S1063774521040210
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- Article
Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 636, doi. 10.1134/S1063774521040064
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- Article
Resistive Switching Effect with ON/OFF Current Relation up to 10<sup>9</sup> in 2D Printed Composite Films of Fluorinated Graphene with V<sub>2</sub>O<sub>5</sub> Nanoparticles.
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- Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900310
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- Article
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.
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- Semiconductors, 2019, v. 53, n. 9, p. 1143, doi. 10.1134/S1063782619090021
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- Article
Silicon p+–p−–n Diodes with Embedded β-FeSi<sub>2</sub> and CrSi<sub>2</sub> Nanocrystals: Morphology, Crystal Structure and Photoelectric Properties.
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- International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400842
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- Article
Bimetallic Pt,Ir-containing coatings formed by MOCVD for medical applications.
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- Journal of Materials Science: Materials in Medicine, 2019, v. 30, n. 6, p. N.PAG, doi. 10.1007/s10856-019-6275-1
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- Article
Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots.
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- JETP Letters, 2019, v. 109, n. 4, p. 270, doi. 10.1134/S0021364019040143
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- Article
Structure of Hf<sub>0.9</sub>La<sub>0.1</sub>O<sub>2</sub> Ferroelectric Films Obtained by the Atomic Layer Deposition.
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- JETP Letters, 2019, v. 109, n. 2, p. 116, doi. 10.1134/S0021364019020115
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Spinodal Decomposition in InSb/AlAs Heterostructures.
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- Semiconductors, 2018, v. 52, n. 11, p. 1392, doi. 10.1134/S1063782618110027
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- Article
Aluminum-induced crystallization of silicon suboxide thin films.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 9, p. 1, doi. 10.1007/s00339-018-2070-y
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- Article
High-Resolution Electron Microscopy Investigations of Structure and Morphology of Cadmium Selenide Nanocrystals.
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- Russian Physics Journal, 2018, v. 61, n. 3, p. 509, doi. 10.1007/s11182-018-1427-1
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- Article
Strain in Ultrathin SiGeSn Layers in a Silicon Matrix.
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- JETP Letters, 2017, v. 106, n. 12, p. 780, doi. 10.1134/S0021364017240092
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Effect of synthesis conditions on the structure and properties of new SiC<sub><italic>x</italic></sub>N<sub><italic>y</italic></sub>M<sub><italic>z</italic></sub> materials for spintronics.
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- Journal of Structural Chemistry, 2017, v. 58, n. 8, p. 1493, doi. 10.1134/S0022476617080030
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- Article
Photoluminescence associated with {113} defects in oxygen-implanted silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 7, p. n/a, doi. 10.1002/pssa.201700317
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- Article
Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi<sub>2</sub> nanocrystallites.
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- Scientific Reports, 2015, p. 1, doi. 10.1038/srep14795
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- Article
Hemozoin "knobs" in Opisthorchis felineus infected liver.
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- Parasites & Vectors, 2015, v. 8, n. 1, p. 1, doi. 10.1186/s13071-015-1061-5
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- Article
The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation.
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- Microscopy & Microanalysis, 2013, v. 19, n. S5, p. 38, doi. 10.1017/S1431927613012294
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- Article
Magnetic field-induced dissipation-free state in superconducting nanostructures.
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- Nature Communications, 2013, v. 4, n. 2, p. 1437, doi. 10.1038/ncomms2437
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- Article
Influence of shape of GaN/AlN quantum dots on luminescence decay law.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 4, p. 653, doi. 10.1002/pssa.201100649
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- Article
Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen.
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- Semiconductors, 2009, v. 43, n. 9, p. 1235, doi. 10.1134/S1063782609090243
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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals.
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- Semiconductors, 2008, v. 42, n. 9, p. 1127, doi. 10.1134/S1063782608090224
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- Article
Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant.
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- Semiconductors, 2007, v. 41, n. 10, p. 1234, doi. 10.1134/S106378260710020X
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Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates.
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- Semiconductors, 2007, v. 41, n. 9, p. 1067, doi. 10.1134/S1063782607090114
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Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition.
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- Semiconductors, 2007, v. 41, n. 3, p. 341, doi. 10.1134/S1063782607030189
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Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy.
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- Semiconductors, 2006, v. 40, n. 3, p. 319, doi. 10.1134/S1063782606030122
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- Article
Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO<sub>2</sub> Films.
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- Semiconductors, 2005, v. 39, n. 10, p. 1168, doi. 10.1134/1.2085265
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- Article
Observation of Antiphase Domains in Cd<sub>x</sub>Hg<sub>1 – </sub><sub>x</sub>Te Films on Silicon by the Phase Contrast Method in Atomic Force Microscopy.
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- JETP Letters, 2005, v. 82, n. 5, p. 292, doi. 10.1134/1.2130915
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- Article
Interface Phonons in Semiconductor Nanostructures with Quantum Dots.
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- Journal of Experimental & Theoretical Physics, 2005, v. 101, n. 3, p. 554, doi. 10.1134/1.2103225
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- Article
MODIFICATION OF GROWTH MODE OF Ge ON Si BY PULSED LOW-ENERGY ION-BEAM IRRADIATION.
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- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 19, doi. 10.1142/S0219581X04001778
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- Article
X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation.
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- Semiconductors, 2002, v. 36, n. 5, p. 568, doi. 10.1134/1.1478550
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- Article
Influence of the Misfit-Dislocation Screw Component on the Formation of Threading Dislocations in Semiconductor Heterostructures.
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- Semiconductors, 2002, v. 36, n. 3, p. 290, doi. 10.1134/1.1461406
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- Article
Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation.
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- Semiconductors, 2000, v. 34, n. 9, p. 1054, doi. 10.1134/1.1309421
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- Article
The Influence of Irradiation and Subsequent Annealing on Si Nanocrystals Formed in SiO[sub 2] Layers.
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- Semiconductors, 2000, v. 34, n. 8, p. 965, doi. 10.1134/1.1188109
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Preparation of Monolayers of Nanoparticles for Transmission Electron Microscopy.
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- Technical Physics, 2000, v. 45, n. 6, p. 783
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Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix.
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- JETP Letters, 1999, v. 70, n. 7, p. 469
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- Article
Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide–germanium–gallium-arsenide(001) system.
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- Technical Physics Letters, 1998, v. 24, n. 12, p. 949, doi. 10.1134/1.1262328
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Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.
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- Semiconductors, 1998, v. 32, n. 11, p. 1222, doi. 10.1134/1.1187595
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Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.
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- Semiconductors, 1997, v. 31, n. 6, p. 626, doi. 10.1134/1.1187231
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- Article